Electrical characteristics of HfO2 films on InP with different atomic-layer-deposition temperatures

Physica Status Solidi (A) Applications and Materials Science

Volumn 210, Issue 7, 2013, Pages 1381-1385

  An, Chee Hong ^a   Mahata, Chandreswar ^a   Byun, Young Chul ^a   Lee, Myung Soo ^a   Kang, Yu Seon ^b   Cho, Mann Ho ^b   Kim, Hyoungsub ^a  

^a Sungkyunkwan University   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

atomic layer deposition; dielectric properties; HfO2; InP; thin films

Indexed keywords

ATOMIC LAYER DEPOSITED; DEPOSITION TEMPERATURES; ELECTRICAL CHARACTERISTIC; ELECTRICAL CHARACTERIZATION; HFO2; INP; STRESS-INDUCED; TRAP GENERATION;

CAPACITANCE; DEPOSITION; DIELECTRIC PROPERTIES; GRAIN GROWTH; HAFNIUM OXIDES; INTERFACES (MATERIALS); THIN FILMS;

ATOMIC LAYER DEPOSITION;

EID: 84881390004     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201228759     Document Type: Article

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