Impact of substrate temperature and film thickness on the interfacial evolution during atomic layer deposition of HfO 2 on InP

Physica Status Solidi - Rapid Research Letters

Volumn 6, Issue 5, 2012, Pages 211-213

  An, Chee Hong ^a   Byun, Young Chul ^a   Lee, Myung Soo ^a   Kim, Hyoungsub ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

Atomic layer deposition; HfO 2; InP; Interfaces; Thin films

Indexed keywords

DEPOSITION TEMPERATURES; EARLY GROWTH; HFO 2; INP; INP SUBSTRATES; INTERFACIAL LAYER; OUT-DIFFUSION; OXIDATION EFFECTS; SELF-CLEANING EFFECTS; SUBSTRATE TEMPERATURE; TEMPERATURE DEPENDENT; TETRAKIS;

FILM GROWTH; HAFNIUM; HAFNIUM OXIDES; INTERFACES (MATERIALS); SUBSTRATES; THIN FILMS;

ATOMIC LAYER DEPOSITION;

EID: 84860672827     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201206109     Document Type: Article

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