Band alignment at the interfaces of Si and metals with high-permittivity insulating oxides

High-K Gate Dielectrics

Volumn , Issue , 2003, Pages 217-250

  Afanas'ev V V ^a   Stesmans, A ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84886021929     PISSN: None     EISSN: None     Source Type: Book    
DOI: None     Document Type: Chapter

References (60)

1. Devine R A B, Vallier L, Autran J-L, Paillet P and Leray J-L 1996 Appl. Phys. Lett. 68 1775
2. Nakagawara O, Toyota Y, Kobayashi M, Yoshino Y, Katayama Y, Tabata H and Kawai T 1996 J. Appl. Phys. 80 388
3. Alers G B, Fleming R M, Wang Y H, Dennis B, Pinczuk A, Redinbo G, Urdahl R, Ong E and Hasan Z 1998 Appl. Phys. Lett. 72 1308
4. Wilk G D, Wallace R M and Anthony J M 2000 J. Appl. Phys. 87 484
5. Copel M, Gribelyuk M and Gusev E 2000 Appl. Phys. Lett. 76 436
6. Robertson J and Chen C W 1999 Appl. Phys. Lett. 74 1168
7. Robertson J 2000 J. Vac. Sci. Technol. B 18 1785
8. Peacock P W and Robertson J 2002 J. Appl. Phys. 92 4712
9. Kadlec J and Gundlach K H 1975 Solid State Commun. 16 621
10. Braunstein A I, Braunstein M, Picus G S and Mead C A 1965 Phys. Rev. Lett. 14 219
11. Braunstein A I, Braunstein M and Picus G S 1965 Phys. Rev. Lett. 15 956
12. Schuermeyer F L and Crawford J A 1966 Appl. Phys. Lett. 9 317
13. Nelson O L and Anderson D E 1966 J. Appl. Phys. 37 77
14. Goodman A M 1970 J. Appl. Phys. 41 2176
15. Ludwig W and Korneffel B 1967 Phys. Status Solidi 24 K 137
16. Shepard K W 1965 J. Appl. Phys. 36 796
17. Szydlo N and Poirier P 1971 J. Appl. Phys. 42 4880
18. DiMaria D J 1974 J. Appl. Phys. 45 5454
19. DiMaria D J and Cartier E 1995 J. Appl. Phys. 78 3883
20. Scarpa A, Paccagnella A, Montera F, Gibaudo G, Pananakakis G, Ghidini G and Fuochi P G 1997 IEEE. Trans. Nucl. Sci. NS-44 1818
21. Afanas’ev V V and Stesmans A 1999 J. Electrochem. Soc. 146 3409
22. Svensson C and Lundsrom I 1973 J. Appl. Phys. 44 4657
23. Houssa M, Tuominen M, Naili M, Afanas’ev V V, Stesmans A, Haukka S and Heyns M M 2000 J. Appl. Phys. 87 8615
24. See, e.g., Adamchuk V K and Afanas’ev V V 1992 Prog. Surf. Sci. 41 111
25. Powell R J 1970 J. Appl. Phys. 41 2424
26. DiStefano T H and Eastman D E 1971 Solid State Commun. 9 2259
27. Afanas’ev V V, Houssa M, Stesmans A and Heyns M M 2002 J. Appl. Phys. 91 3079
28. Afanas’ev V V, Houssa M, Stesmans A, Adriaenssens G J and Heyns M M 2002 J. Non-Cryst. Solids 303 69
29. Miyazaki S, Narasaki M, Ogasawara O and HiroseM 2001 Microelectron. Eng. 59 373
30. Miyazaki S 2001 J. Vac. Sci. Technol. B 19 2212
31. Yu H Y, Li MF, Cho B J, Yeo C C, JooM S, Kwong D L, Pan J S, Ang C H, Zheng J Z and Ramanathan S 2002 Appl. Phys. Lett. 81 376
32. French R H, Müllejans H and Jones D J 1998 J. Am. Ceram. Soc. 81 2549
33. Ritala M and Leskela M 1994 Appl. Surf. Sci. 75 333
34. Ritala M, Kukli K, Rahtu A, Raisanen P I, Leskela M, Sajavaara T and Keininen J 2000 Science 288 319
35. Houssa M, Naili M, Zhao C, Bender H, HeynsM M and Stesmans A 2001 Semicond. Sci. Technol. 16 31
36. Campbell S A, Ma T Z, Smith R, Gladfelter G L and Chen F 2001 Microelectron. Eng. 59 361
37. Afanas’ev V V and Stesmans A 1997 Phys. Rev. Lett. 78 2437
38. Afanas’ev V V, Stesmans A, Chen F, Shi X and Campbell S A 2002 Appl. Phys. Lett. 81 1053
39. Afanas’ev V V, Bassler M, Pensl G, Schulz M J and Stein von Kamienski E 1996 J. Appl. Phys. 79 3108
40. Afanas’ev V V, Stesmans A and Andersson M O 1996 Phys. Rev. B 54 10820
41. Lee D O, Roman P, Wu C T, Mahoney W, Horn M, Mumbauer P, Brubaker M, Grant R and Ruzyllo J 2001 Microelectron. Eng. 59 405
42. French R H, Glass S J, Ohuchi F S, Xu Y-N and ChingWY 1994 Phys. Rev. B 49 5133
43. Ealet B, Elyakhloufi M H, Gillet E and Ricci M 1994 Thin Solid Films 250 92
44. Nam S-W, Yoo J-H, Nam S, Choi H-J, Lee D, Ko D-H, Moon J-H, Ku J-H and Choi S 2002 J. Non-Cryst. Solids 303 139
45. Afanas’ev V V, Stesmans A, Mrstik B J and Zhao C 2002 Appl. Phys. Lett. 81 1678
46. Afanas’ev V V, Stesmans A and Tsai W 2003 Appl. Phys. Lett. 83 245
47. Lucovsky G 2002 J. Non-Cryst. Solids 303 40
48. Di Stefano T H and Lewis J E 1974 J. Vac. Sci. Technol. 11 1020
49. Afanas’ev V V, Houssa M, Stesmans A and HeynsMM2001 Appl. Phys. Lett. 78 3073
50. Ludeke R, Cuberes M T and Cartier E 2000 Appl. Phys. Lett. 76 2886
51. J. Vac. Sci. Technol. B 18 2153
52. Goodman A M 1968 Appl. Phys. Lett. 13 275
53. Fowler R H 1931 Phys. Rev. 38 45
54. Deal B E, Snow E H and Mead C A 1966 J. Phys. Chem. Solids 27 1873
55. Powell R J and Beairsto R C 1973 Solid State Electron. 16 265
56. Solomon P M and DiMaria D J 1981 J. Appl. Phys. 52 5867
57. Pauling L 1960 The Nature of The Chemical Bond 3rd edn (Ithaca, NY: Cornell University Press)
58. Kurtin S, McGill T C and Mead C A 1969 Phys. Rev. Lett. 22 1433
59. Wang C J and DiStefano T H 1975 CRC Crit. Rev. Solid State Sci. 5 327
60. Fowler R H and Nordheim L 1928 Proc. R. Soc. A 119 173