Two-bit lanthanum oxide trapping layer nonvolatile flash memory

Journal of the Electrochemical Society

Volumn 154, Issue 7, 2007, Pages

  Lin, Yu Hsien ^a   Chien, Chao Hsin ^a,b   Yang, Tsung Yuan ^a   Lei, Tan Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; ELECTRON TRAPS; LANTHANUM COMPOUNDS; NONVOLATILE STORAGE;

LANTHANUM OXIDE; LARGE MEMORY WINDOWS; MEMORY OPERATIONS; TRAPPING LAYERS;

FLASH MEMORY;

EID: 34249866842     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2737345     Document Type: Article

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