Electron trap density distribution of Si-rich silicon nitride extracted using the modified negative charge decay model of silicon-oxide-nitride-oxide- silicon structure at elevated temperatures

Applied Physics Letters

Volumn 89, Issue 6, 2006, Pages

  Kim, Tae Tae Hun ^a   Park, Il Han ^a   Lee, Jong Duk ^a   Shin, Hyung Cheol ^a   Park, Byung Gook ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY (SPECIFIC GRAVITY); ELECTRIC FIELDS; ELECTRON ENERGY LEVELS; MATHEMATICAL MODELS; SILICON NITRIDE; STOICHIOMETRY;

INTERNAL ELECTRIC FIELD; SHALLOW ENERGY LEVEL; STOICHIOMETRIC SILICON NITRIDE;

ELECTRON TRAPS;

EID: 33747094470     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2335619     Document Type: Article

References (5)

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2. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley New York, 1981), p. 520.
3. S. Fujita, H. Toyoshima, M. Nishihara, and A. Sasaki, J. Electron. Mater. 11, 795 (1982).
4. Tung-Sheng Chen, Kuo-Hong Wu, Hsien Chung, and Chin-Hsing Kao, IEEE Electron Device Lett. 25, 205 (2004).
5. S. J. Wrazien Yijie Zhao, Joel D. Krayer, and M. H. White, Solid-State Electron. 47, 885 (2003).