Effect of postdeposition annealing on the structural and electrical properties of thin Dy2TiO5 dielectrics

Thin Solid Films

Volumn 519, Issue 22, 2011, Pages 8149-8153

  Pan, Tung Ming ^a   Lu, Chih Hung ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

Annealing; Dielectric material; Dysprosium titanate; Electrical properties and measurements; Sputtering; Structural properties

Indexed keywords

CAPACITANCE VALUES; CONSTANT VOLTAGE STRESS; DENSITY OF INTERFACE STATE; DYSPROSIUM TITANATE; ELECTRICAL CHARACTERISTIC; ELECTRICAL PROPERTIES AND MEASUREMENTS; HYSTERESIS VOLTAGE; INTERFACIAL LAYER; LOW-LEAKAGE CURRENT; MORPHOLOGICAL FEATURES; POST DEPOSITION ANNEALING; REACTIVE CO-SPUTTERING; SI(1 0 0); STRUCTURAL AND ELECTRICAL PROPERTIES; TIO;

ANNEALING; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CRYSTAL ATOMIC STRUCTURE; DIELECTRIC FILMS; DYSPROSIUM; PHOTOELECTRON SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; STRUCTURAL PROPERTIES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRIC PROPERTIES;

EID: 80052119693     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.06.039     Document Type: Article

References (22)

1. G.D. Wilk, R.M. Wallace, and J.M. Anthony J. Appl. Phys. 89 2001 5243
2. J. Kim, and K. Yong Electrochem. Solid-State Lett. 7 2004 F35
3. Z. Zhang, M. Li, and S.A. Campbell IEEE Trans. Electron Devices 52 2005 1839
4. A. Fissel, H.J. Osten, and E. Bugiel J. Vac. Sci. Technol., B 21 2003 1765
5. T.M. Pan, C.L. Chen, W.W. Yeh, and W.J. Lai Electrochem. Solid-State Lett. 10 2007 H101
6. A. Fissel, Z. Elassar, O. Kirfel, E. Bugiel, M. Czernohorsky, and H.J. Osten J. Appl. Phys. 99 2006 074105
7. T.M. Pan, C.S. Liao, H.H. Hsu, C.L. Chen, J.D. Lee, K.T. Wang, and J.C. Wang Appl. Phys. Lett. 87 2005 262908
8. F.C. Chiu J. Appl. Phys. 102 2007 044116
9. H. Iwai, S. Ohmi, S. Akama, C. Ohshima, A. Kikuchi, I. Kashiwagi, J. Taguchi, H. Yamamoto, J. Tonotani, Y. Kim, I. Ueda, A. Kuriyama, and Y. Yoshihara Int. Electron. Devices Meet. 2002 625
10. J. Paivasaari, M. Putkonen, and L. Niinist Thin Solid Films 472 2005 275
11. S. Van Elshocht, C. Adelmann, P. Lehnen, and S. De Gendt Electrochem. Solid-State Lett. 12 2009 G17
12. Y. Zhao, M. Toyama, K. Kita, K. Kyuno, and A. Toriumi Appl. Phys. Lett. 88 2006 072904
13. Y. Zhao, K. Kita, K. Kyuno, and A. Toriumi Appl. Phys. Lett. 89 2006 252905
14. A.U. Mane, Ch. Wenger, T. Schroeder, P. Zaumseil, G. Lippert, G. Weidner, and H.J. Mussig J. Electrochem. Soc. 152 2005 C399
15. R.B. van Dover Appl. Phys. Lett. 74 1999 3041
16. G. Scarel, A. Debernardi, D. Tsoutsou, S. Spiga, S.C. Capelli, L. Lamagna, S.N. Volkos, M. Alia, and M. Fanciulli Appl. Phys. Lett. 91 2007 102901
17. M. Fanciulli, and G. Scarel Rare Earth Oxide Thin Film: Growth, Characterization, and Applications 2007 Springer Berlin
18. T.M. Pan, T.F. Lei, T.S. Chao, M.C. Liaw, F.H. Ko, and C.P. Lu J. Electrochem. Soc. 148 2001 G315
19. S. Jeon, and H. Hwang J. Appl. Phys. 93 2003 6393
20. B.F. Dzhurinskii, D. Gati, N.P. Sergushin, V.I. Nefedov, and Ya.V. Salyn Russ. J. Inorg. Chem. 20 1975 2307
21. T. Schroeder, G. Lupina, J. Dabrowski, A. Mane, Ch. Wenger, G. Lippert, and H.J. Mussig Appl. Phys. Lett. 87 2005 022902
22. W.A. Hill, and C.C. Coleman Solid-State Electron. 23 1980 987