Defect states in HfO 2 on deposited on Ge(1 1 1) and Ge(1 0 0) substrates

Applied Surface Science

Volumn 255, Issue 13-14, 2009, Pages 6443-6450

  Lucovsky, G ^a   Seo, H ^a   Long, J P ^a   Chung, K B ^a   Vasic, R ^a   Ulrich, M ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

Band edge defects; Plasma deposition of HfO2; Plasma nitridation of Ge; Visible and vacuum ultra violet spectroscopic ellipsometry; X ray absorption spectroscopy; X ray photoelectron spectroscopy

Indexed keywords

ALUMINUM NITRIDE; CRYSTALLINE MATERIALS; DEFECTS; DEPOSITION; DIELECTRIC MATERIALS; GERMANIUM; HAFNIUM OXIDES; HIGH-K DIELECTRIC; INTERFACES (MATERIALS); PHOTOELECTRONS; PHOTONS; RAPID THERMAL ANNEALING; SILICON COMPOUNDS; SPECTROSCOPIC ELLIPSOMETRY; SUBSTRATES; TRANSITION METALS; X RAY ABSORPTION SPECTROSCOPY;

BAND EDGE DEFECTS; CURRENT VOLTAGE MEASUREMENT; DIELECTRIC INTERFACE; INTERFACIAL TRANSITION REGIONS; PLASMA NITRIDATION; SPECTROSCOPIC MEASUREMENTS; VACUUM ULTRAVIOLETS; X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 63449131211     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.09.070     Document Type: Article

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