Electron trapping in HfAlO high-κ stack for flash memory applications: An origin of Vth window closure during cycling operations

IEEE Transactions on Electron Devices

Volumn 58, Issue 5, 2011, Pages 1344-1351

  Zheng, Xue Feng ^a,b   Robinson, Colin ^a   Zhang, Wei Dong ^a   Zhang, Jian Fu ^a   Govoreanu, Bogdan ^c   Van Houdt, Jan ^c  

^a LIVERPOOL JOHN MOORES UNIVERSITY   (United Kingdom)

^b XIDIAN UNIVERSITY   (China)

^c IMEC   (Belgium)

Author keywords

Electron trap; endurance; energy distribution; Flash memory; high dielectrics; pulsed I V; window closure

Indexed keywords

DEEP LEVEL; ELECTRON TRAPPING; ENDURANCE; ENERGY DISTRIBUTION; ENERGY DISTRIBUTIONS; ENERGY LEVEL; MEMORY APPLICATIONS; MEMORY TECHNOLOGY; MULTI-PULSE TECHNIQUES; PROGRAM/ERASE; PROGRAMMING PULSE; PULSED I-V; VOLTAGE WINDOW;

DURABILITY; ELECTRIC POWER DISTRIBUTION; ELECTRON TRAPS; ELECTRONS; ION BEAMS;

FLASH MEMORY;

EID: 79955531120     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2115244     Document Type: Article

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