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Volumn 3, Issue 12, 2010, Pages 881-888

Statistical analysis of excitonic transitions in single, free-standing GaN nanowires: Probing impurity incorporation in the poissonian limit

Author keywords

doping; excitonic luminescence; impurities; scaling; Single nanowires

Indexed keywords


EID: 78650417978     PISSN: 19980124     EISSN: 19980000     Source Type: Journal    
DOI: 10.1007/s12274-010-0061-1     Document Type: Article
Times cited : (27)

References (22)
  • 3
    • 33947103692 scopus 로고    scopus 로고
    • Functional nanowires
    • Lieber, C. M.; Wang, Z. L. Functional nanowires. MRS Bull. 2007, 32, 99-104 and references therein.
    • (2007) MRS Bull. , vol.32 , pp. 99-104
    • Lieber, C.M.1    Wang, Z.L.2
  • 4
    • 61649114519 scopus 로고    scopus 로고
    • GaAs core-shell nanowires for photovoltaic applications
    • Czaban, J. A.; Thompson, D. A.; LaPierre, R. R. GaAs core-shell nanowires for photovoltaic applications. Nano Lett. 2009, 9, 148-154.
    • (2009) Nano Lett. , vol.9 , pp. 148-154
    • Czaban, J.A.1    Thompson, D.A.2    Lapierre, R.R.3
  • 5
    • 77955729715 scopus 로고    scopus 로고
    • In situ investigation of self-induced GaN nanowire nucleation on Si
    • Chèze, C.; Geelhaar, L.; Trampert, A.; Riechert, H. In situ investigation of self-induced GaN nanowire nucleation on Si. Appl. Phys. Lett. 2010, 97, 043101.
    • (2010) Appl. Phys. Lett. , vol.97 , pp. 043101
    • Chèze, C.1    Geelhaar, L.2    Trampert, A.3    Riechert, H.4
  • 6
    • 77954821822 scopus 로고    scopus 로고
    • Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons
    • Brandt, O.; Pfüller, C.; Chèze, C.; Geelhaar, L.; Riechert, H. Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons. Phys. Rev. B2010, 81, 045302.
    • (2010) Phys. Rev. B , vol.81 , pp. 045302
    • Brandt, O.1    Pfüller, C.2    Chèze, C.3    Geelhaar, L.4    Riechert, H.5
  • 9
    • 0034664492 scopus 로고    scopus 로고
    • Dielectrically enhanced excitons in semiconductor-insulator quantum wires: Theory and experiment
    • Muljarov, E. A.; Zhukov, E. A.; Dneprovskii, V. S.; Masumoto, Y. Dielectrically enhanced excitons in semiconductor-insulator quantum wires: Theory and experiment. Phys. Rev. B2000, 62, 7420-7432.
    • (2000) Phys. Rev. B , vol.62 , pp. 7420-7432
    • Muljarov, E.A.1    Zhukov, E.A.2    Dneprovskii, V.S.3    Masumoto, Y.4
  • 10
    • 0000253266 scopus 로고
    • Nodal hydrogenic wave functions of donors on semiconductor surfaces
    • Levine, J. D. Nodal hydrogenic wave functions of donors on semiconductor surfaces. Phys. Rev. 1965, 140, A586-A589.
    • (1965) Phys. Rev. , vol.140
    • Levine, J.D.1
  • 11
    • 33846358518 scopus 로고    scopus 로고
    • Ionization energy of donor and acceptor impurities in semiconductor nanowires: Importance of dielectric confinement
    • Diarra, M.; Niquet, Y. -M.; Delerue, C.; Allan, G. Ionization energy of donor and acceptor impurities in semiconductor nanowires: Importance of dielectric confinement. Phys. Rev. B2007, 75, 045301.
    • (2007) Phys. Rev. B , vol.75 , pp. 045301
    • Diarra, M.1    Niquet, Y.-M.2    Delerue, C.3    Allan, G.4
  • 12
    • 57649121580 scopus 로고    scopus 로고
    • Low temperature diffusion length of excitons in gallium nitride measured by cathodoluminescence technique
    • Ino, N.; Yamamoto, N. Low temperature diffusion length of excitons in gallium nitride measured by cathodoluminescence technique. Appl. Phys. Lett. 2008, 93, 232103.
    • (2008) Appl. Phys. Lett. , vol.93 , pp. 232103
    • Ino, N.1    Yamamoto, N.2
  • 13
    • 26744450856 scopus 로고
    • Rapid radiative decay and enhanced optical nonlinearity of excitons in a quantum well
    • Hanamura, E. Rapid radiative decay and enhanced optical nonlinearity of excitons in a quantum well. Phys. Rev. B1988, 38, 1228-1234.
    • (1988) Phys. Rev. B , vol.38 , pp. 1228-1234
    • Hanamura, E.1
  • 15
    • 0343990276 scopus 로고
    • Center-of-mass quantization of excitons in GaAs quantum-well wires
    • Lage, H.; Heitmann, D.; Cingolani, R.; Grambow, P.; Ploog, K. Center-of-mass quantization of excitons in GaAs quantum-well wires. Phys. Rev. B1991, 44, 6550-6553.
    • (1991) Phys. Rev. B , vol.44 , pp. 6550-6553
    • Lage, H.1    Heitmann, D.2    Cingolani, R.3    Grambow, P.4    Ploog, K.5
  • 20
    • 33646377436 scopus 로고    scopus 로고
    • Surface segregation and backscattering in doped silicon nanowires
    • Fernández-Serra, M. V.; Adessi, Ch.; Blase, X. Surface segregation and backscattering in doped silicon nanowires. Phys. Rev. Lett. 2006, 96, 166805.
    • (2006) Phys. Rev. Lett. , vol.96 , pp. 166805
    • Fernández-Serra, M.V.1    Adessi, C.2    Blase, X.3
  • 21
    • 33744821385 scopus 로고    scopus 로고
    • Self-purification in semiconductor nanocrystals
    • Dalpian, G. M.; Chelikowsky, J. R. Self-purification in semiconductor nanocrystals. Phys. Rev. Lett. 2006, 96, 226802.
    • (2006) Phys. Rev. Lett. , vol.96 , pp. 226802
    • Dalpian, G.M.1    Chelikowsky, J.R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.