Fundamental optical transitions in GaN

Applied Physics Letters

Volumn 68, Issue 20, 1996, Pages 2784-2786

  Chen, G D ^a   Smith, M ^a   Lin, J Y ^a   Jiang, H X ^a   Wei, Su Huai ^b   Asif Khan, M ^c   Sun, C J ^c  

^a KANSAS STATE UNIVERSITY   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^c APA Optronics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; BINDING ENERGY; CALCULATIONS; ELECTRON TRANSITIONS; EXCITONS; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE;

EFFECTIVE MASS; GALLIUM NITRIDE; LOCAL DENSITY APPROXIMATIONS; OPTICAL TRANSITIONS; RADIATIVE RECOMBINATION LIFETIME;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030149403     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116606     Document Type: Article

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