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Journal of Crystal Growth

Volumn 312, Issue 24, 2010, Pages 3569-3573

Properties of Ge-doped, high-quality bulk GaN crystals fabricated by hydride vapor phase epitaxy

(4) Oshima, Yuichi a Yoshida, Takehiro a Watanabe, Kazutoshi a Mishima, Tomoyoshi a

a HITACHI CABLE LTD (Japan)

Author keywords

A1. Doping; A3. Hydride vapor phase epitaxy; B1. Gallium compounds; B1. Nitrides

Indexed keywords

A1. DOPING; A3. HYDRIDE VAPOR PHASE EPITAXY; B1. GALLIUM COMPOUNDS; B1. NITRIDES; BAND GAP ENERGY; CATHODOLUMINESCENCE IMAGING; DISLOCATION DENSITIES; DOPANT SOURCES; DOPED CRYSTALS; DOPING CONCENTRATION; GAN CRYSTALS; GAN THIN FILMS; GE CONCENTRATIONS; HALL MEASUREMENTS; HIGH QUALITY; HYDRIDE VAPOR PHASE EPITAXY; LASER FLASH METHODS; OPTICAL ABSORPTION COEFFICIENTS; THERMAL EXPANSION COEFFICIENTS;

CARRIER CONCENTRATION; CONCENTRATION (PROCESS); DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; THERMAL EXPANSION; VAPOR PHASE EPITAXY; VAPORS;

GERMANIUM;

EID: 78149280408 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.09.036 Document Type: Article

Times cited : (54)

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