Observation of the fractional quantum Hall effect in an oxide

Nature Materials

Volumn 9, Issue 11, 2010, Pages 889-893

  Tsukazaki, A ^a,b   Akasaka, S ^c   Nakahara, K ^c   Ohno, Y ^d   Ohno, H ^d   Maryenko, D ^d   Ohtomo, A ^e   Kawasaki, M ^b,d,f  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c ROHM CO LTD   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

^e TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^f TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; GROUND STATE; HALL EFFECT DEVICES; HALL MOBILITY; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MOLECULAR PHYSICS; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; QUANTUM THEORY; SILICON COMPOUNDS;

DIFFERENT ORIGINS; ELECTRON CORRELATION EFFECT; FRACTIONAL QUANTUM HALL EFFECTS; OXIDE ELECTRONICS; QUANTUM TRANSPORT; SMOOTH INTERFACE; TECHNOLOGICAL ADVANCES; TWO-DIMENSIONAL SYSTEMS;

QUANTUM HALL EFFECT;

EID: 77958483248     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat2874     Document Type: Article

References (28)

1. Klitzing, K., Dorda, G. & Pepper, M. New method for high-accuracy determination of the fine-structure constant based on quantized Hall resistance. Phys. Rev. Lett. 45,494-497 (1980).
2. Tsui, D. C, Stormer, H. L. & Gossard, A. C. Two-dimensional magnetotransport in the extreme quantum limit. Phys. Rev. Lett. 48, 1559-1562 (1982).
3. Willett, R. etal. Observation of an even-denominator quantum number in the fractional quantum Hall effect. Phys. Rev. Lett. 59, 1776-1779 (1987).
4. Das Sarma, S. & Pinczuk, A. Perspectives in Quantum Hall Effects (Wiley-VCH, 1997).
5. Manfra, M. J., Pfeiffer, L. N., West, K. W., de Picciotto, R. & Baldwin, K. W. High mobility two-dimensional hole system in GaAs/AlGaAs quantum wells grown on (100) GaAs substrates. Appl. Phys. Lett. 86, 162106 (2005).
6. Nelson, S. F. etal. Observation of the fractional quantum Hall effect in Si/SiGe heterostructures. Appl. Phys. Lett. 61, 64-66 (1992).
7. De Poortere, E. P. et al . Enhanced electron mobility and high order fractional quantum Hall states in AlAs quantum wells. Appl. Phys. Lett. 80, 1583-1585 (2002).
8. Du, X., Skachko, I., Duerr, F., Luican, A. & Andrei, E. Y. Fractional quantum Hall effect and insulating phase of Dirac electrons in graphene. Nature 462, 192-195 (2009).
9. Bolotin, K. I., Ghahari, F., Shulman, M. D., Stormer, H. L. & Kim, P. Observation of the fractional quantum Hall effect in graphene. Nature 462, 196-199 (2009).
10. 3 heterointerface. Nature 427, 423-426 (2004).
11. Tsukazaki, A. etal. Quantum Hall effect in polar oxide heterostructures. Science. 315, 1388-1391 (2007).
12. 3 interface ground state. Nature 456, 624-627 (2008).
13. -1. Nature Mater. 9,482-484 (2010).
14. -x O/ZnO heterostructures. Phys. Rev. B 78,233308 (2008).
15. 2/Vs in modulation-doped GaAs. Appl. Phys. Lett. 55, 1888-1890 (1989).
16. -xAs heterostructures. Phys. Rev. B 41, 8449-8460 (1990).
17. 2/Vs. J. Cryst. Growth 311, 1658-1661 (2009).
18. 2/Vs in AlGaN/GaN heterostructures grown by molecular-beam epitaxy. Appl. Phys. Lett. 85, 5394-5396 (2004).
19. Manfra, M. J. et al. Transport and percolation in a low-density high-mobility two-dimensional hole system. Phys. Rev. Lett. 99, 236402 (2007).
20. Du, R. R., Stormer, H. L.,Tsui, D. C., Pfeiffer, L. N. &West,K.W. Experimental evidence for new particles in the fractional quantum Hall effect. Phys. Rev. Lett. 70, 2944-2947 (1993).
21. Boebinger, G. S. et al. Activation energies and localization in the fractional quantum Hall effect. Phys. Rev. B 36, 7919-7929 (1987).
22. Willett, R. L., Stormer, H. L., Tsui, D. C., Gossard, A. C. & English, J. H. Quantitative experimental test for the theoretical gap energies in the fractional quantum Hall effect. Phys. Rev. B 37, 8476-8479 (1988).
23. Lai, K., Pan, W., Tsui, D. C. & Xie, Y-H. Fractional quantum Hall effect at ν =2/3 and 4/3 in strained Si quantum wells. Phys. Rev. B 69, 125337 (2004).
24. Dean, C. R. et al. Intrinsic gap of the ν = 5/2 fractional quantum Hall state. Phys. Rev. Lett. 100,146803 (2008).
25. Pan, W. etal. Experimental studies of the fractional quantum Hall effect in the first excited Landau level. Phys. Rev. B 77, 075307 (2008).
26. Choi, H. C., Kang, W., Das Sarma, S., Pfeiffer, L. N. & West, K. W. Activation gaps of fractional quantum Hall effect in the second Landau level. Phys. Rev. B 77, 081301 (2008).
27. Ghosh, S. et al. Room-temperature spin coherence in ZnO. Appl. Phys. Lett. 86, 232507 (2005).
28. Baer, W. S. Faraday rotation in ZnO: Determination of the electron effective mass. Phys. Rev. 154, 785-789 (1967).