Energy-band parameters of atomic layer deposited Al2O 3 and HfO2 on InxGa1-xAs

Applied Physics Letters

Volumn 94, Issue 5, 2009, Pages

  Huang, M L ^a,b   Chang, Y C ^a   Chang, Y H ^a   Lin, T D ^a   Kwo, J ^a   Hong, M ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; ATOMIC PHYSICS; ATOMIC SPECTROSCOPY; BINDING ENERGY; BLOOD VESSEL PROSTHESES; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRODEPOSITION; ELECTRON ENERGY ANALYZERS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; ELECTRON SPECTROSCOPY; ELECTRON TUBE DIODES; ENERGY DISSIPATION; ENERGY GAP; GALLIUM; HAFNIUM COMPOUNDS; OZONE WATER TREATMENT; PHOTOELECTRON SPECTROSCOPY;

ATOMIC-LAYER-DEPOSITED; CONDUCTION-BAND OFFSETS; CORE LEVELS; ENERGY BAND-GAPS; ENERGY BANDS; ENERGY DIFFERENCES; FOWLER-NORDHEIM TUNNELING; REFLECTION ELECTRON ENERGY LOSS SPECTROSCOPIES; VALENCE-BAND MAXIMUMS; VALENCE-BAND OFFSETS; X-RAY PHOTOELECTRON SPECTROSCOPIES; XPS SPECTRUM;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 59849105046     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3078399     Document Type: Article

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