Ingan/gan quantum dot red λ=630 nm}) Laser

IEEE Journal of Quantum Electronics

Volumn 49, Issue 11, 2013, Pages 923-931

  Frost, Thomas ^a   Banerjee, Animesh ^a   Sun, Kai ^a   Chuang, Shun Lien ^b   Bhattacharya, Pallab ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

Differential gain; High temperature stability laser; Ingan gan; Molecular beam epitaxy; Quantum dot; Red emitting laser

Indexed keywords

DIFFERENTIAL GAIN; HIGH TEMPERATURE STABILITY; INGAN/GAN; QUANTUM DOT; RED-EMITTING;

MOLECULAR BEAM EPITAXY; OPTICAL DATA PROCESSING; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM WELL LASERS;

EID: 84884856636     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2013.2281062     Document Type: Article

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