High-power tensile-strained GaAsP-AlGaAs quantum-well lasers emitting between 715 and 790 nm

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 5, Issue 3, 1999, Pages 780-784

  Erbert, Götz ^a   Bugge, F ^a   Knauer, A ^a   Sebastian, J ^a   Thies, A ^a   Wenzel, Hans ^a   Weyers, M ^a   Trankle G ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CLADDING (COATING); CRYSTAL STRUCTURE; CURRENT DENSITY; HIGH POWER LASERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; STRAIN; TENSILE PROPERTIES; WAVEGUIDES;

BROAD AREA LASERS; OPTICAL CAVITY STRUCTURES; SEMICONDUCTING ALUMINUM GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM ARSENIDE PHOSPHIDE; TENSILE STRAIN; WAVELENGTH RANGE;

QUANTUM WELL LASERS;

EID: 0033124044     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.788451     Document Type: Article

References (9)

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