InGaN laser diodes operating at 450-460 nm grown by rf-plasma MBE

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 2, 2012, Pages

  Skierbiszewski, C ^a,b   Siekacz, M ^a,b   Turski, H ^a   Muziol G ^a   Sawicka, M ^a,b   Feduniewicz Zmuda, A ^a   Smalc Koziorowska, J ^a,b   Perlin, P ^a,b   Grzanka, S ^a   Wasilewski, Z R ^c   Kucharski, R ^d   Porowski, S ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b TOPGAN LTD   (Poland)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^d AMMONO Sp Zoo   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

VACUUM APPLICATIONS;

BLUE LASER DIODES; GAN SUBSTRATE; GROWTH TECHNOLOGIES; HIGH-NITROGEN; INGAN LASER DIODES; INGAN QUANTUM WELLS; LIGHT LOSS; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; RF PLASMA; SINGLE QUANTUM WELL; THREADING DISLOCATION DENSITIES;

GALLIUM NITRIDE;

EID: 84861633544     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3665223     Document Type: Article

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