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Volumn 41, Issue 23, 2005, Pages 35-36

Measurement of modal gain in 1.1 μm p-doped tunnel injection InGaAs/GaAs quantum dot laser heterostructures

Author keywords

[No Author keywords available]

Indexed keywords

INJECTION LASERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

EID: 28244491683     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20053374     Document Type: Article
Times cited : (12)

References (12)
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  • 2
    • 0033322463 scopus 로고    scopus 로고
    • Gain and linewidth enhancement factor in InAs quantum-dot laser diodes
    • Newell, T.C.: et al. ' Gain and linewidth enhancement factor in InAs quantum-dot laser diodes ', IEEE Photonics Technol. Lett., 1999, 11, p. 1527-1529
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  • 3
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    • Low chirp observed in directly modulated quantum dot lasers
    • Saito, H.: et al. ' Low chirp observed in directly modulated quantum dot lasers ', IEEE Photonics Technol. Lett., 2000, 12, p. 1298-1300
    • (2000) IEEE Photonics Technol. Lett. , vol.12 , pp. 1298-1300
    • Saito, H.1
  • 4
    • 0043173950 scopus 로고    scopus 로고
    • Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers
    • Bhattacharya, P.: et al. ' Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers ', IEEE J. Quantum Electron., 2003, 39, p. 952-962
    • (2003) IEEE J. Quantum Electron. , vol.39 , pp. 952-962
    • Bhattacharya, P.1
  • 5
    • 0001759454 scopus 로고    scopus 로고
    • 0.60As/GaAs quantum dot lasers
    • 0.60As/GaAs quantum dot lasers ', Appl. Phys. Lett., 1997, 70, p. 2952-2953
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    • Kamath, K.1
  • 6
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    • Modulation characteristics of quantum-dot lasers: The influence of p-type doping and electronic density of states on obtaining high speed
    • Deppe, D.G., Huang, H., and Shchekin, O.B.: ' Modulation characteristics of quantum-dot lasers: the influence of p-type doping and electronic density of states on obtaining high speed ', IEEE J. Quantum Electron., 2002, 38, p. 1587-1593
    • (2002) IEEE J. Quantum Electron. , vol.38 , pp. 1587-1593
    • Deppe, D.G.1    Huang, H.2    Shchekin, O.B.3
  • 8
    • 0016484178 scopus 로고
    • Gain spectra in GaAs double-heterostructure injection lasers
    • Hakki, B.W., and Paoli, T.L.: ' Gain spectra in GaAs double- heterostructure injection lasers ', J. Appl. Phys., 1975, 46, p. 1299-1306
    • (1975) J. Appl. Phys. , vol.46 , pp. 1299-1306
    • Hakki, B.W.1    Paoli, T.L.2
  • 9
    • 0019024186 scopus 로고
    • Measurement of gain and absorption spectra in AlGaAs buried heterostructure lasers
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  • 10
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    • Gain spectra measurements by a variable stripe length method with current injection
    • Oster, A., Erbert, G., and Wenzel, H.: ' Gain spectra measurements by a variable stripe length method with current injection ', Electron. Lett., 1997, 33, p. 864-866
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  • 11
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    • Determination of single-pass optical gain and internal loss using a multisection device
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  • 12
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    • Matthews, D.R.: et al. ' Experimental investigation of the effect of wetting-layer states on the gain-current characteristics of quantum-dot lasers ', Appl. Phys. Lett., 2002, 81, p. 4904-4906
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.