1.28 μm lasing from stacked InAs/GaAs quantum dots with low-temperature-grown AlGaAs cladding layer by metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 86, Issue 5, 2005, Pages 1-3

  Tatebayashi, Jun ^a   Hatori, Nobuaki ^a   Ishida, Mitsuru ^a   Ebe, Hiroji ^a   Sugawara, Mitsuru ^a   Arakawa, Yasuhiko ^a   Sudo, Hisao ^b   Kuramata, Akito ^b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT DENSITY; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL COMMUNICATION; OPTICAL FIBERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR LASERS;

EMISSION ENERGY; GAIN SPECTRA; OPTICAL SPECTRUM ANALYSERS; QUANTUM DOT LASERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 21044441694     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1857075     Document Type: Article

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