Simulation of InGaN/GaN multiple quantum well light-emitting diodes with quantum dot model for electrical and optical effects

Optical and Quantum Electronics

Volumn 38, Issue 12-14, 2006, Pages 1077-1089

  Xia, C S ^a   Hu, W D ^a   Wang, C ^a   Li, Z F ^a   Chen, X S ^a   Lu, W ^a   Li, Z M Simon ^b   Li, Z Q ^b  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^b Crosslight Software Inc   (Canada)

Author keywords

In rich quantum dot; InGaN GaN; Light emitting diode (LED); Quantum dot model; Simulation

Indexed keywords

IN-RICH QUANTUM DOT; QUANTUM DOT MODEL; QUANTUM TRANSPORT;

COMPUTER SIMULATION; DATA REDUCTION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 33947267509     PISSN: 03068919     EISSN: 1572817X     Source Type: Journal    
DOI: 10.1007/s11082-006-9029-5     Document Type: Conference Paper

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