SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Optical and Quantum Electronics

Volumn 40, Issue 14-15 SPEC. ISS., 2008, Pages 1149-1154

Analysis of thermal performance of InGaP/InGaAlP quantum wells for high-power red laser diodes

(4) Qiu, Bocang a McDougall, Stewart a Yanson, Dan a Marsh, John H a

a Intense Ltd (United Kingdom)

Author keywords

High power; InGaAlP; InGaP; Quantum wells; Red lasers

Indexed keywords

HIGH-POWER; INGAALP; INGAP; QUANTUM WELLS; RED LASERS;

COMPUTER SIMULATION; LASERS; MIXED CONVECTION; OPTOELECTRONIC DEVICES; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM WELL LASERS;

EID: 69949103633 PISSN: 03068919 EISSN: 1572817X Source Type: Journal
DOI: 10.1007/s11082-009-9314-1 Document Type: Article

Times cited : (7)

References (7)

1
- 0003835355
- John Wiley & Sons Inc.
- Chuang S.L.: Physics of Optoelectronic Devices. John Wiley & Sons Inc. (1995)
- (1995) Physics of Optoelectronic Devices
- Chuang, S.L.¹

2
- 0042959817
- Room temperature continuous wave operation of an AlGaInP double heterostructure laser grown by atmospheric pressure metalorganic chemical vapor deposition
- 10.1063/1.96366
- M. Ikeda Y. Mori H. Sato K. Kaneko N. Watanabe 1985 Room temperature continuous wave operation of an AlGaInP double heterostructure laser grown by atmospheric pressure metalorganic chemical vapor deposition Appl. Phys. Lett. 47 10 1027 1028 10.1063/1.96366
- (1985) Appl. Phys. Lett. , vol.47 , Issue.10 , pp. 1027-1028
- Ikeda, M.¹ Mori, Y.² Sato, H.³ Kaneko, K.⁴ Watanabe, N.⁵

3
- 0025791052
- Heterojunction band offsets and effective masses in III-V quaternary alloys
- 10.1088/0268-1242/6/1/005
- M.P.C.M. Krijn 1991 Heterojunction band offsets and effective masses in III-V quaternary alloys Semicond. Sci. Technol. 6 27 31 10.1088/0268-1242/6/1/ 005
- (1991) Semicond. Sci. Technol. , vol.6 , pp. 27-31
- Krijn, M.P.C.M.¹

4
- 0031120580
- Dynamic properties of GaInP multielectrode ridge-waveguide lasers
- 10.1088/0268-1242/12/4/017
- J. Kuhn B. Vollmer A. Moritz S. Heppel C. Geng F. Scholz A. Hangleiter H. Schweizer 1997 Dynamic properties of GaInP multielectrode ridge-waveguide lasers Semicond. Sci. Technol. 12 439 442 10.1088/0268-1242/12/4/017
- (1997) Semicond. Sci. Technol. , vol.12 , pp. 439-442
- Kuhn, J.¹ Vollmer, B.² Moritz, A.³ Heppel, S.⁴ Geng, C.⁵ Scholz, F.⁶ Hangleiter, A.⁷ Schweizer, H.⁸

5
- 0029250224
- High-power CW operation of AlGaInP laser-diode array at 640 nm
- 10.1109/68.345900
- J.A. Skidmore M.A. Emanuel R.J. Beach W.J. Benett B.L. Freitas N.W. Carlson R.W. Solarz D.P. Bour D.W. Treat 1995 High-power CW operation of AlGaInP laser-diode array at 640 nm IEEE Photon. Technol. Lett. 7 2 133 135 10.1109/68.345900
- (1995) IEEE Photon. Technol. Lett. , vol.7 , Issue.2 , pp. 133-135
- Skidmore, J.A.¹ Emanuel, M.A.² Beach, R.J.³ Benett, W.J.⁴ Freitas, B.L.⁵ Carlson, N.W.⁶ Solarz, R.W.⁷ Bour, D.P.⁸ Treat, D.W.⁹

6
- 35349023824
- 5-W reliable operation over 2000h of 5-mm-wide 650-nm AlGaInP-GaInP-AlGaAs laser bars with asymmetric cladding layers
- 10.1109/LPT.2006.882322
- B. Sumpf M. Zorn R. Staske J. Fricke P. Ressel G. Erbert M. Weyers G. Trankle 2006 5-W reliable operation over 2000h of 5-mm-wide 650-nm AlGaInP-GaInP-AlGaAs laser bars with asymmetric cladding layers IEEE Photon. Technol. Lett. 18 18 1955 1957 10.1109/LPT.2006.882322
- (2006) IEEE Photon. Technol. Lett. , vol.18 , Issue.18 , pp. 1955-1957
- Sumpf, B.¹ Zorn, M.² Staske, R.³ Fricke, J.⁴ Ressel, P.⁵ Erbert, G.⁶ Weyers, M.⁷ Trankle, G.⁸

7
- 35348992220
- 3-W Broad area lasers and 12-W bars with conversion efficiencies up to 40% at 650 nm
- B. Sumpf M. Zorn R. Staske J. Fricke P. Ressel A. Ginolas K. Paschke G. Erbert M. Weyers G. Trankle 2007 3-W Broad area lasers and 12-W bars with conversion efficiencies up to 40% at 650 nm IEEE J. Select. Top. Quantum Electron 19 2 1183 1193
- (2007) IEEE J. Select. Top. Quantum Electron , vol.19 , Issue.2 , pp. 1183-1193
- Sumpf, B.¹ Zorn, M.² Staske, R.³ Fricke, J.⁴ Ressel, P.⁵ Ginolas, A.⁶ Paschke, K.⁷ Erbert, G.⁸ Weyers, M.⁹ Trankle, G.¹⁰

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.