History of gallium-nitride-based light-emitting diodes for illumination

Proceedings of the IEEE

Volumn 101, Issue 10, 2013, Pages 2211-2220

  Nakamura, Shuji ^a   Krames, M R ^b  

^a University of California   (United States)

^b Soraa Inc   (United States)

Author keywords

Gallium nitride; light emitting diodes (leds)

Indexed keywords

DIODES; GALLIUM NITRIDE; III-V SEMICONDUCTORS; NITRIDES; SAPPHIRE; SUBSTRATES;

FOREIGN SUBSTRATES; GAN BASED LED; GAN SUBSTRATE; GAN-BASED DEVICES; NITRIDE BASED LIGHT EMITTING DIODES; OUTPUT POWER DENSITY; PERFORMANCE CHARACTERISTICS;

LIGHT EMITTING DIODES;

EID: 84884593517     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2013.2274929     Document Type: Article

References (73)

1. H. P. Maruska and J. J. Tietjen, "The preparation and properties of vapor-deposited single-crystal-line GaN," Appl. Phys. Lett., vol. 15, pp. 327-329, 1969.
2. H. P. Maruska, D. A. Stevenson, and J. I. Pankove, "Violet luminescence of Mg-doped GaN," Appl. Phys. Lett., vol. 22, pp. 303-305, 1973.
3. M. Ilegems and R. Dingle, "Luminescence of Be- and Mg-doped GaN," J. Appl. Phys., vol. 44, pp. 4234-4235, 1973.
4. O. Lagerstedt and B. Monemar, "Luminescence in epitaxial GaN:Cd," J. Appl. Phys., vol. 45, pp. 2266-2272, 1974.
5. H. P. Maruska and D. A. Stevenson, "Mechanism of light production in metal-insulator-semiconductor diodes; GaN:Mg violet light-emitting diodes," Solid-State Electron., vol. 17, pp. 1171-1179, 1974.
6. M. Sano and M. Aoki, "Epitaxial growth of undoped and Mg-doped GaN," Jpn. J. Appl. Phys., vol. 15, pp. 1943-1950, 1976.
7. Nikkan Kogyo Shinbun, MIS type blue LEDs with a brightness of 200 mcd were developed by Toyoda Gosei, Japanese newspaper press release, Oct. 20, 1993.
8. S. Yoshida, S. Misawa, and S. Gonda, "Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN-coated sapphire substrates," Appl. Phys. Lett., vol. 42, pp. 427-429, 1983.
9. H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, "Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer," Appl. Phys. Lett., vol. 48, pp. 353-355, 1986. (Pubitemid 17615525)
10. S. Nakamura, "GaN growth using GaN buffer layer," Jpn. J. Appl. Phys., vol. 30, pp. L1705-L1707, 1991.
11. S. Nakamura, T. Mukai, and M. Senoh, "In situ monitoring and hall measurements of GaN with GaN buffer layers," J. Appl. Phys., vol. 71, pp. 5543-5549, 1992.
12. H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, "p-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)," Jpn. J. Appl. Phys., vol. 28, pp. L2112-L2114, 1989.
13. S. Nakamura, T. Mukai, M. Senoh, and N. Iwasa, "Thermal annealing effects on p-type Mg-doped GaN films," Jpn. J. Appl. Phys., vol. 31, pp. L139-L142, 1992.
14. S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, "Hole compensation mechanism of p-type GaN films," Jpn. J. Appl. Phys., vol. 31, pp. 1258-1266, 1992.
15. J. Neugenbauer and C. G. Van de Walle, "Hydrogen in GaN: Novel aspects of a common impurity," Phys. Rev. Lett., vol. 75, pp. 4452-4455, 1995.
16. J. Neugenbauer and C. G. Van de Walle, "Role of hydrogen in doping of GaN," Appl. Phys. Lett., vol. 68, pp. 1829-1831, 1996. (Pubitemid 126688399)
17. J. I. Pankove, E. A. Miller, D. Richman, and J. E. Berkeyheiser, "Electroluminescence in GaN," J. Luminescence, vol. 4, pp. 63-66, 1971.
18. S. Nakamura, T. Mukai, and M. Senoh, "High-power GaN p-n junction blue-light-emitting diodes," Jpn. J. Appl. Phys., vol. 30, pp. L1998-L2001, 1991.
19. N. Holonyak, Jr. and S. F. Bevaqua, "Coherent (visible) light emission from Ga(As1-xPx) junctions," Appl. Phys. Lett., vol. 1, pp. 82-83, 1962.
20. K. Osamura, K. Nakajima, and Y. Murakami, "Fundamental absorption edge in GaN, InN and their alloys," Solid State Commun., vol. 11, pp. 617-621, 1972.
21. K. Osamura, S. Naka, and Y. Murakami, "Preparation and optical properties of Ga1-xInxN thin films," J. Appl. Phys., vol. 46, pp. 3432-3437, 1975.
22. T. Nagatomo, T. Kuboyama, H. Minamino, and O. Omoto, "Properties of Ga1-xInxN films prepared by MOVPE," Jpn. J. Appl. Phys., vol. 28, pp. L1334-L1336, 1989.
23. N. Yoshimoto, T. Matsuoka, T. Sasaki, and A. Katsui, " Photolumiesence of InGaN films grown at high temperature by MOVPE," Appl. Phys. Lett., vol. 59, pp. 2251-2253, 1991.
24. S. Nakamura and T. Mukai, "High-quality InGaN films grown on GaN films," Jpn. J. Appl. Phys., vol. 31, pp. L1457-L1459, 1992.
25. S. Nakamura, M. Senoh, and T. Mukai, "p-GaN/n-InGaN/n-GaN double-heterostructure blue-light-emitting diodes," Jpn. J. Appl. Phys., vol. 32, pp. L8-L11, 1993. (Pubitemid 23625530)
26. S. Nakamura, T. Mukai, and M. Senoh, "Candera-class high-brightness InGaN/AlgaN double-heterostructure blue-light-emitting diodes," Appl. Phys. Lett., vol. 64, pp. 1687-1689, 1994.
27. Nikkei Sangyo Shinbun, "p-n junction DH blue LEDs with a brightness of more than 1000 mcd were developed by Nichia Chemical Industries Ltd.," Japanese newspaper press release, Nov. 30, 1993.
28. J. W. Matthews and A. E. Blakeslee, "Defects in epitaxial multilayers I. Misfit dislocations," J. Crystal Growth, vol. 27, pp. 118-125, 1974.
29. E. C. Young, F. Wu, A. E. Romanov, A. Tyagi, C. S. Gallinat, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Lattice tilt and misfit dislocations in (11-22) semipolar GaN heteroepitaxy," Appl. Phys. Exp., vol. 3, 2010, 011004-3.
30. S. D. Lester, F. A. Ponce, M. G. Craford, and D. A. Steigerwald, "High dislocations densities in high efficiency GaN-based light-emitting diodes," Appl. Phys. Lett., vol. 66, pp. 1249-1251, 1995.
31. S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, "Spontaneous emission of localized excitons in InGaN single and multiquantum well structures," Appl. Phys. Lett., vol. 69, pp. 4188-4190, 1996. (Pubitemid 126619294)
32. S. Nakamura, "The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes," Science, vol. 281, pp. 956-961, 1998. (Pubitemid 28399238)
33. S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, "High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures," Jpn. J. Appl. Phys., vol. 34, pp. L797-L799, 1995.
34. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, and T. Mukai, "Superbright green InGaN single-quantum-well-structure light-emitting diodes," Jpn. J. Appl. Phys., vol. 34, pp. L1332-L1335, 1995.
35. S. Nakamura and G. Fasol, The Blue Laser Diode. Berlin, Germany: Springer-Verlag, 1997, pp. 216-219.
36. D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, "Illumination with solid state lighting technology," IEEE J. Sel. Top. Quantum Electron., vol. 8, no. 2, pp. 310-320, 2002. (Pubitemid 34678493)
37. T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, "Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening," Appl. Phys. Lett., vol. 84, pp. 855-857, 2004.
38. V. Haerle, B. Hahn, S. Kaiser, A. Weimar, S. Bader, F. Eberhard, A. Plo?ssl, and D. Eiser, "High brightness LEDs for general lighting applications using the new ThinGaNi technology," Phys. Stat. Sol. (A), vol. 201, pp. 2736-2739, 2004.
39. M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, "Status and future of high-power light-emitting diodes for solid-state lighting," IEEE J. Display Technol., vol. 3, no. 2, pp. 160-175, 2007. (Pubitemid 46808672)
40. Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, "White light emitting diodes with super-high luminous efficacy," J. Phys. D, Appl. Phys., vol. 43, 2010, 354002.
41. K. Motoki, "Developments of gallium nitride substrates," SEI Tech. Rev., no. 70, pp. 28-35, 2010.
42. T. Yoshida, Y. Oshima, T. Eri, K. Ikeda, S. Yamamoto, K. Watanabe, M. Shibata, and T. Mishima, "Fabrication of 30 in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method," J. Crystal Growth, vol. 310, pp. 5-7, 2008. (Pubitemid 350184059)
43. H. Geng, H. Sunakawa, N. Sumi, K. Yamamoto, A. Yamaguchi, and A. Usui, "Growth and strain characterization of high quality GaN crystal by HVPE," J. Crystal Growth, vol. 350, pp. 44-49, 2012.
44. K. Fujito, S. Kubo, and I. Fujimura, "Development of bulk GaN crystals and nonpolar/semipolar substrates by HVPE," MRS Bull., vol. 34, pp. 313-317, 2009.
45. R. Dwilicski, R. Doradzicski, J. Garczycski, L. P. Sierzputowski, A. Puchalski, Y. Kanbara, K. Yagi, H. Minakuchi, and H. Hayashi, "Excellent crystallinity of truly bulk ammonothermal GaN," J. Crystal Growth, vol. 311, no. 10, pp. 3015-3018, May 1, 2009.
46. T. Hashimoto, F. Wu, J. S. Speck, and S. Nakamura, "Growth of bulk GaN crystals by the basic ammonothermal method," Jpn. J. Appl. Phys., vol. 46, pp. L889-L891, 2007. (Pubitemid 350085421)
47. D. Ehrentraut, R. T. Pakalapati, D. S. Kamber, W. Jiang, D. W. Pocius, B. C. Downey, M. McLaurin, and Mark P. D'Evelyn, "High quality, low cost ammonothermal bulk GaN substrates," Jpn. J. Appl. Phys, vol. 52, 2013, DOI: 10.7567/JJAP.52.08JA01.
48. Y. Mori, M. Imade, K. Murakami, H. Takazawa, H. Imabayashi, Y. Todoroki, K. Kitamoto, M. Maruyama, M. Yoshimura, Y. Kitaoka, and T. Sasaki, "Growth of bulk GaN crystal by Na flux method under various conditions," J. Crystal Growth, vol. 350, no. 1, pp. 72-74, Jul. 1, 2012.
49. A. Chakraborty, B. A. Haskell, S. keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, "Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates," Jpn. J. Appl. Phys., vol. 44, pp. L173-L175, 2005. (Pubitemid 40540796)
50. N. F. Gardner, J. C. Kim, J. J. Wierer, Y. C. Shen, and M. R. Krames, "Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN multiple-quantum-well light-emitting diodes," Appl. Phys. Lett., vol. 86, 2005, 111101.
51. R. Sharma, P. M. Pattison, H. Masui, R. M. Farrell, T. J. Baker, B. A. Haskell, F. Wu, S. P. DenBaars, and J. S. Speck, "Demonstration of a semipolar (10-1-3) InGaN/GaN green light emitting diodes," Appl. Phys. Lett., vol. 87, 2005, 231110.
52. K. Okamoto, H. Ohta, D. Nakagawa, M. Sonobe, J. Ichihara, and H. Takasu, "Dislocation-free m-plane InGaN/GaN light-emitting diodes on m-plane GaN single crystal," Jpn. J. Appl. Phys., vol. 45, pp. L1197-L1199, 2006. (Pubitemid 47434532)
53. M. C. Schmidt, K. C. Kim, H. Sato, N. Fellows, H. Masui, S. Nakamura, S. P. DenBaars, and J. S. Speck, "High power and high external efficiency m-plane InGaN light emitting diodes," Jpn. J. Appl. Phys., vol. 46, pp. L126-L128, 2007. (Pubitemid 47252468)
54. A. Tyagi, H. Zhong, N. N. Fellows, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High brightness violet InGaN/GaN light emitting diodes on semipolar (10-1-1) bulk GaN substrates," Jpn. J. Appl. Phys., vol. 46, pp. L129-L131, 2007. (Pubitemid 47252469)
55. H. Yamada, K. Iso, M. Saito, H. Masui, K. Fujito, S. P. DenBaars, and S. Nakamura, "Compositional dependence of nonpolar m-plane InxxGa1-xN/GaN light emitting diodes," Appl. Phys. Exp., vol. 1, 2008, 041101.
56. Y. Zhao, J. Sonoda, C. C. Pan, S. Brinkly, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, "30-mW-class high power and high-efficiency blue semipolar (10-1-1) InGaN/GaN light-emitting diodes obtained by backside roughening technique," Appl. Phys. Exp., vol. 3, 2010, 102101.
57. S. Yamada, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, "High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20-21) GaN substrate," Appl. Phys. Exp., vol. 2, 2010, 122102.
58. Y. Enya, Y. Yoshizumi, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, "531 nm green lasing of InGaN based laser diodes on semipolar {20-21} free-standing GaN substrates," Appl. Phys. Exp., vol. 2, 2009, 082101.
59. Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, M. Ueno, K. Katayama, and T. Nakamura, "Continuous-wave operation of 520 nm green InGaN-based laser diodes in semipolar {20-21} GaN substrates," Appl. Phys. Exp., vol. 2, 2009, 092101.
60. Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High-power blue-violet semipolar (20-2-1) InGaN/GaN light-emitting diodes with low efficiency droop at 200/Acm2," Appl. Phys. Exp., vol. 4, 2011, 082104.
61. C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, "High-power, low-efficiency-droop semipolar (20-2-1) single-quantum-well blue light-emitting diodes," Appl. Phys. Exp., vol. 5, 2012, 062103.
62. K. J. Vampola, N. N. Fellows, H. Masui, S. E. Brinkley, M. Furukawa, R. B. Chung, H. Sato, J. Sonoda, H. Hirasawa, M. Iza, S. P. DenBaars, and S. Nakamura, "Highly efficient broad-area blue and white light-emitting diodes on bulk GaN substrates," Phys. Stat. Sol. A, vol. 206, pp. 200-202, 2009.
63. C. C. Pan, T. Gilbert, N. Pfaff, S. Tanaka, Y. Zhao, D. Feezell, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Reduction in thermal droop using thick single-quantum-well structure in semipolar (20-2-1) blue light-emitting diodes," Appl. Phys. Exp., vol. 5, 2012, 102103.
64. Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High-power blue-violet semipolar (20-2-1) InGaN/GaN light-emitting diodes with low efficiency droop at 200/Acm2," Appl. Phys. Exp., vol. 4, 2011, 082104.
65. H. Y. Ryu, D. S. shin, and J. I. Shim, "Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material," Appl. Phys. Lett., vol. 100, 2012, 131109.
66. F. Bernardini, V. Fiorentini, and D. Vanderbilt, "Spontaneous polarization and piezoelectric constants of III-V nitrides," Phys. Rev. B, vol. 56, pp. 10024-10027, 1997.
67. A. David, M. J. Grundmann, J. F. Kaeding, N. F. Gardner, T. G. Milhopoulos, and M. R. Krames, "Carrier distribution in (0001) InGaN/GaN multiple quantum well light-emitting diodes," Appl. Phys. Lett., vol. 92, 2008, 053502.
68. Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, "Auger recombination in InGaN measured by photoluminescence," Appl. Phys. Lett., vol. 91, 2007, 141101. (Pubitemid 47534188)
69. E. Kiouspakis, P. Rinke, K. Delaney, and C. G. Van de Walle, "Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes," Appl. Phys. Lett., vol. 98, 2011, 161107.
70. M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, "Origin of efficiency droop in GaN-based light-emitting diodes," Appl. Phys. Lett, vol. 91, 2007, 183507.
71. U. Ozgur, H. Liu, X. Li, X. Ni, and H. Morkoc, "GaN-based light-emitting diodes: Efficiency at high injection levels," Proc. IEEE, vol. 98, no. 7, pp. 1180-1196, Jul. 2010.
72. M. J. Cich, R. I. Aldaz, A. Chakraborty, A. David, M. J. Grundmann, A. Tyagi, M. Zhang, F. M. Steranka, and M. R. Krames, "Bulk GaN based violet light-emitting diodes with high efficiency at very high current density," Appl. Phys. Lett., vol. 101, 2012, 223509.
73. A. David, "Surface-roughened light-emitting diodes: An accurate model," IEEE J. Display Technol., vol. 9, no. 5, pp. 301-316, 2013.