Growth and strain characterization of high quality GaN crystal by HVPE

Journal of Crystal Growth

Volumn 350, Issue 1, 2012, Pages 44-49

  Geng, Huiyuan ^a   Sunakawa, Haruo ^a   Sumi, Norihiko ^a   Yamamoto, Kazutomi ^a   Atsushi Yamaguchi, A ^b   Usui, Akira ^a  

^a FURUKAWA CO LTD   (Japan)

^b KANAZAWA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A1. Stresses; A3. Hydride vapor phase epitaxy; B1. GaN

Indexed keywords

B1. GAN; DEPTH PROFILE; DISLOCATION DENSITIES; DRIVING FORCES; EPITAXIAL OVERGROWTH; FREESTANDING GAN; FREESTANDING GAN SUBSTRATES; GAN CRYSTALS; GAN ISLANDS; GAN LAYERS; GROWTH STAGES; HIGH QUALITY; HYDRIDE VAPOR PHASE EPITAXY; INTRINSIC STRAIN; RADIUS OF CURVATURE; RESIDUAL STRAINS; SAPPHIRE SUBSTRATES; STRAIN CHARACTERIZATION; THREE-DIMENSIONAL GROWTH; WAFER BENDING;

BUFFER LAYERS; EPITAXIAL GROWTH; MICROMETERS; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; SUBSTRATES; THICKNESS MEASUREMENT; THREE DIMENSIONAL; TITANIUM CARBIDE; VAPORS;

GALLIUM NITRIDE;

EID: 84861650498     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.12.020     Document Type: Conference Paper

References (22)

1. A. Usui, H. Sunakawa, A. Sakai, and A.A. Yamaguchi Thick GaN epitaxial growth with low dislocation density by hydride vapor phase epitaxy Japanese Journal of Applied Physics 36 Part 2, No. 7B 1997 L899 L902
2. A. Sakai, H. Sunakawa, and A. Usui Defect structure in selectively grown GaN films with low threading dislocation density Applied Physics Letters 71 16 1997 2259 2261
3. A. Sakai, H. Sunakawa, A. Kimura, and A. Usui Self-organized propagation of dislocations in GaN films during epitaxial lateral overgrowth Applied Physics Letters 76 4 2000 442 444
4. A. Sakai, H. Sunakawa, and A. Usui Transmission electron microscopy of defects in GaN films formed by epitaxial lateral overgrowth Applied Physics Letters 73 4 1998 481 483
5. K. Motoki, T. Okahisa, S. Nakahata, N. Matsumoto, H. Kimura, H. Kasai, K. Takemoto, K. Uematsu, M. Ueno, Y. Kumagai, A. Koukitu, and H. Seki Growth and characterization of freestanding GaN substrates Journal of Crystal Growth 237-239 Part 2 2002 912 921
6. K. Motoki, T. Okahisa, R. Hirota, S. Nakahata, K. Uematsu, and N. Matsumoto Dislocation reduction in GaN crystal by advanced-deep Journal of Crystal Growth 305 2 2007 377 383
7. Y. Oshima, T. Eri, M. Shibata, H. Sunakawa, K. Kobayashi, T. Ichihashi, and A. Usui Preparation of freestanding GaN wafers by hydride vapor phase epitaxy with void-assisted separation Japanese Journal of Applied Physics 42 Part 2, No. 1A/B 2003 L1 L3
8. A. Usui, T. Ichihashi, K. Kobayashi, H. Sunakawa, Y. Oshima, T. Eri, and M. Shibata Role of TiN film in the fabrication of freestanding GaN wafers using hydride vapor phase epitaxy with void-assisted separation Physica Status Solidi (a) 194 2 2002 572 575
9. K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO) Journal of Crystal Growth 221 1-4 2000 316 326
10. S.W. Lee, J.-S. Ha, H.-J. Lee, H.-J. Lee, H. Goto, T. Hanada, T. Goto, K. Fujii, M.W. Cho, and T. Yao Lattice strain in bulk GaN epilayers grown on CrN/sapphire template Applied Physics Letters 94 8 2009 082105
11. H. Geng, A.A. Yamaguchi, H. Sunakawa, N. Sumi, K. Yamamoto, and A. Usui Residual strain evaluation by cross-sectional micro-reflectance spectroscopy of freestanding GaN grown by hydride vapor phase epitaxy Japanese Journal of Applied Physics 50 1 2011 01AC01
12. A.A. Yamaguchi, H.Y. Geng, H. Sunakawa, N. Sumi, K. Yamamoto, and A. Usui Depth profile of residual strain in freestanding GaN substrates measured by cross-sectional micro-reflectance spectroscopy Physica Status Solidi (c) 8 5 2011 1455 1458
13. H. Morkoc Comprehensive characterization of hydride VPE grown GaN layers and templates Materials Science and Engineering: R: Reports 33 5-6 2001 135 207
14. S.K. Mathis, A.E. Romanov, L.F. Chen, G.E. Beltz, W. Pompe, and J.S. Speck Modeling of threading dislocation reduction in growing GaN layers Journal of Crystal Growth 231 3 2001 371 390
15. x interlayers Journal of Crystal Growth 300 1 2007 70 74
16. H. Klapper, Y.M. Fishman, and V.G. Lutsau Elastic energy and line directions of grown-in dislocations in KDP crystals Physica Status Solidi (a) 21 1 1974 115 121
17. H. Klapper, and H. Kuppers Directions of dislocation lines in crystals of ammonium hydrogen oxalate hemihydrate grown from solution Acta Crystallographica A 29 5 1973 495 503
18. A.E. Romanov, W. Pompe, G.E. Beltz, and J.S. Speck An approach to threading dislocation reaction kinetics Applied Physics Letters 69 22 1996 3342 3344
19. L.B. Freund Some elementary connections between curvature and mismatch strain in compositionally graded thin films Journal of the Mechanics and Physics of Solids 44 5 1996 723 736
20. P. Cantu, F. Wu, P. Waltereit, S. Keller, A.E. Romanov, S.P. DenBaars, and J.S. Speck Role of inclined threading dislocations in stress relaxation in mismatched layers Journal of Applied Physics 97 10 2005 103534
21. D.M. Follstaedt, S.R. Lee, A.A. Allerman, and J.A. Floro Strain relaxation in AlGaN multilayer structures by inclined dislocations Journal of Applied Physics 105 8 2009 083507
22. M. Zhu, S. You, T. Detchprohm, T. Paskova, E.A. Preble, D. Hanser, and C. Wetzel Inclined dislocation-pair relaxation mechanism in homoepitaxial green GaInN/GaN light-emitting diodes Physical Review B 81 12 2010 125325