Development of gallium nitride substrates

SEI Technical Review

Volumn , Issue 70, 2010, Pages 28-35

  Motoki, Kensaku ^a  

^a Semiconductor Technologies R and D Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMMERCIAL PRODUCTIONS; DISLOCATION REDUCTION; FOREIGN SUBSTRATES; GAAS; GALLIUM NITRIDE SUBSTRATE; GAN CRYSTALS; GAN LAYERS; GAN SUBSTRATE; KEY MATERIALS; LOW-DISLOCATION DENSITY; NEW PROCESS; PYRAMIDAL PITS; SINGLE CRYSTAL SUBSTRATES; SUMITOMO ELECTRICS; VIOLET LASER DIODES; VIOLET LASERS; WIDE AREA;

CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; LATTICE MISMATCH; SINGLE CRYSTALS; SUBSTRATES; SUPERCONDUCTING MATERIALS;

GALLIUM ALLOYS;

EID: 77952711682     PISSN: 13434349     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Review

References (12)

1. "Sumitomo Electric 100 years history" (in Japanese) 1999
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3. K. Motoki, T. Okahisa, S. Nakahata, N. Matsumoto, H. Kimura, H. Kasai, K. Takemoto, K. Uematsu, M. Ueno, Y. Kumagai, A. Koukitu, H. Seki: "Preparation of Large GaN Substrates," Materials Science and Engineering B, B93 (2002) 123-130
4. K. Motoki, T. Okahisa, S. Nakahata, N. Matsumoto, H. Kimura, H. Kasai, K. Takemoto, K. Uematsu, M. Ueno, Y. Kumagai, A. Koukitu, H. Seki: "Growth and Characterization of Freestanding GaN Substrates," Journal of Crystal Growth 237-239 (2002) 912-921 (Pubitemid 34545048)
5. S. Nakahata, T. Okahisa, N. Matsumoto, K. Motoki, K. Uematsu, M. Ueno, H. Kasai, H. Kimura, K. Takemoto: "Development of Large GaN Single Crystal Substrate," SEI Technical Review, (2002), No. 161, 76-79
6. K. Motoki, T. Okahisa, S. Nakahata, K. Uematsu, H. Kasai, N. Matsumoto, Y. Kumagai, A. Koukitu and H. Seki : "Preparation of 2inch GaN substrates," Proc. 21st century COE Joint Workshop on Bulk Nitride, IPAP Conf. Series 4 (2003) 32-37
7. Kensaku Motoki: "Bulk Crystal by Hydride Vapor Phase Epitaxy (HVPE)," Technology and Application of White LED Lighting System (inJapanese), CMC publishing, 2003
8. Kensaku Motoki: "Gallium Nitride Crystal Substrate" (in Japanese), Bulletin of Japan Electronic Materials Society, Vol.37, 2006 Oct p.2-6
9. Kensaku Motoki, Takuji Okahisa, Ryu Hirota, Seiji Nakahata, Koji Uematsu and Naoki Matsumoto: "Dislocation reduction in GaN crystal by advanced-DEEP," Journal of Crystal Growth 305 (2007) 377-383
10. S. Nagahama, N. Iwasa, M. Senoh, T. Matsushita, Y. Sugimoto, H. Kiyoku, T. Kozaki, M. Sano, H. Matsumura, H. Umemoto, K. Chocho and T. Mukai: "High-Power and Long-Lifetime InGaN MultiQuantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates," Jpn. J. Appl. Phys. 39 (2000) L647
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