Growth of bulk GaN crystals by the basic ammonothermal method

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 36-40, 2007, Pages

  Hashimoto, Tadao ^a,b,c   Wu, Feng ^a,b   Speck, James S ^a,b   Nakamura, Shuji ^a,b  

^a University of California   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c SixPoint Materials Inc   (United States)

Author keywords

Ammonothermal growth; Bulk GaN; GaN wafer; Low angle grains

Indexed keywords

AMMONIA; CRYSTALLOGRAPHY; FULL WIDTH AT HALF MAXIMUM; GALLIUM NITRIDE; WAFER BONDING; X RAY DIFFRACTION;

AMMONOTHERMAL GROWTH; BULK GAN; LOW ANGLE GRAINS; POLYHEDRON SHAPE;

CRYSTAL GROWTH;

EID: 36048984939     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L889     Document Type: Article

References (21)

1. S. Nakamura, T. Mukai, and M. Senoh: Jpn. J. Appl. Phys. 32 (1993) L16.
2. M. C. Schmidt, K. C. Kim, H. Sato, N. Fellows, H. Masui, S. Nakamura, S. DenBaars, and J. S. Speck: Jpn. J. Appl. Phys. 46 (2007) L126.
3. A. Tyagi, H. Zhong, N. N. Fellows, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura: Jpn. J. Appl. Phys. 46 (2007) L129.
4. S. Porowski: MRS Internet J. Nitride Semicond. Res. 4S1. (1999) G1.3.
5. T. Inoue, Y. Seki, O. Oda, S. Kurai, Y. Yamada, and T. Taguchi: Phys. Status Solidi B 223 (2001) 15.
6. H. Yamane, M. Shimada, T. Sekiguchi, and F. J. DiSalvo: J. Cryst. Growth 186 (1998) 8.
7. F. Kawamura, M. Morishita, K. Omae, M. Yoshimura, Y. Mori, and T. Sasaki: Jpn. J. Appl. Phys. 42 (2003) L879.
8. D. Peters: J. Cryst. Growth 104 (1990) 411.
9. R. Dwilinski, R. Doradzinski, J. Garczynski, L. Sierzputowski, M. Palczewska, A. Wysmolek, and M. Kaminska: MRS Internet J. Nitride Semicond. Res. 3 (1998) 25.
10. D. R. Ketchum and J. W. Kolis: J. Cryst. Growth 222 (2001) 431.
11. A. P. Purdy, R. J. Jouet, and C. F. George: Cryst. Growth Des. 2 (2002) 141.
12. M. J. Callahan, B. Wang, L. O. Bouthillette, S. Q. Wang, J. W. Kolis, and D. F. Bliss: Mater. Res. Soc. Symp. Proc. 798 (2004) Y2.10.
13. T. Hashimoto, K. Fujito, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura: J. Cryst. Growth 275 (2005) e525.
14. T. Hashimoto, K. Fujito, R. Sharma, E. R. Letts, P. T. Fini, J. S. Speck, and S. Nakamura: J. Cryst. Growth. 291 (2006) 100.
15. R. T. Dwilinski, R. M. Doradzhiski, J. Garczynski, L. P. Sierzputowski, and Y. Kanbara: U.S. Patent 6656615 B2 (2003).
16. M. Callahan, B. G. Wang, K. Rakes, D. Bliss, L. Bouthillette, M. Suscavage, and S. Q. Wang: J. Mater. Sci. 41 (2006) 1399.
17. T. Hashimoto, K. Fujito, M. Salto, J. S. Speck, and S. Nakamura: Jpn. J. Appl. Phys. 44 (2005) L1570.
18. B. Wang, M. J. Callahan, K. D. Takes, L. O. Bouthillette, S.-Q. Wang, D. F. Bliss, and J. W. Kolis: J. Cryst. Growth 287 (2006) 376.
19. Y. Kagamitani, D. Ehrentraut, A. Yoshikawa, N. Hoshino, T. Fukuda, S. Kawabata, and K. Inaba: Jpn. J. Appl. Phys. 45 (2006) 4018.
20. T. Hashimoto, F. Wu, J. S. Speck, and S. Nakamura: Jpn. J. Appl. Phys. 46 (2007) L525.
21. T. Hashimoto, F. Wu, J. S. Speck, and S. Nakamura: Nat. Mater. 6 (2007) 568.