GaN-based light-emitting diodes: Efficiency at high injection levels

Proceedings of the IEEE

Volumn 98, Issue 7, 2010, Pages 1180-1196

  Ozgur, Ümit ^a   Liu, Huiyong ^a   Li, Xing ^a   Ni, Xianfeng ^a   Morkoç, Hadis ^a  

^a Virginia Commonwealth University   (United States)

Author keywords

Auger recombination; Carrier spillover; Efficiency droop; Light emitting diode (LED); Nitrides; Quantum efficiency

Indexed keywords

AUGERS; DIODES; DISPLAY DEVICES; ELECTRONS; ENERGY CONVERSION; ENERGY UTILIZATION; GALLIUM ALLOYS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; INDIUM ALLOYS; LIGHT; LIGHT EMITTING DIODES; LUMINANCE; NITRIDES; QUANTUM CHEMISTRY; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM WELLS;

AUGER RECOMBINATION; CARRIER SPILLOVER; EFFICIENCY DROOPS; GAN-BASED LIGHT-EMITTING DIODES; HIGH BRIGHTNESS LEDS; HIGH PERFORMANCE DEVICES; INTERNAL QUANTUM EFFICIENCY; NONRADIATIVE RECOMBINATION PROCESS;

QUANTUM EFFICIENCY;

EID: 77953687660     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2010.2043210     Document Type: Conference Paper

References (57)

1. A. Michiue, T. Miyoshi, T. Yanamoto, T. Kozaki, S. Nagahama, Y. Narukawa, M. Sano, T. Yamada, and T. Mukai, "Recent development of nitride LEDs and LDs," Proc. SPIE, vol.7216, pp. 72161Z-1-72161Z-6, 2009.
2. J. Y. Tsao, M. E. Coltrin, M. H. Crawford, and J. A. Simmons, "Solid-state lighting: An integrated human factors, technology, and economic perspective," Proc. IEEE, vol.98, no.7, Jul. 2010.
3. H. Morko̧c, Handbook of Nitride Semiconductors and Devices, vol.3. New York: Wiley, 2008, ch. 1.
4. M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, "Status and future of high-power light-emitting-diodes for solid-state lighting," J. Display Tech., vol.3, no.2, pp. 160-175, 2007.
5. M. R. Krames, G. Christenson, D. Collins, L. W. Cook, M. G. Craford, A. Edwards, R. M. Fletcher, N. Gardner, W. Goetz, W. Imler, E. Johnson, R. S. Kern, R. Khare, F. K. Kish, C. Lowery, M. J. Ludowise, R. Mann, M. Maranowski, S. Maranowski, P. S. Martin, J. O'Shea, S. Rudaz, D. Steigerwald, J. Thompson, J. J. Wierer, J. Yu, D. Basile, Y. L. Chang, G. Hasnain, M. Hueschen, K. Killeen, C. Kocot, S. Lester, J. Miller, G. Mueller, R. Mueller-Mach, J. Rosner, R. Schneider, T. Takeuchi, and T. S. Tan, "High-brightness AlGaInN light-emitting diodes," Proc. SPIE, vol.3938, pp. 2-12, 2000.
6. T. Mukai, M. Yamada, and S. Nakamura, "Characteristics of InGaN-based UV/blue/green/amber/red light-emitting diodes," Jpn. J. Appl. Phys., vol.38, pp. 3976-3981, Apr. 1999.
7. B. Monemar and B. E. Sernelius, "Defect related issues in the Bcurrent roll-off" in InGaN based light emitting diodes," Appl. Phys. Lett., vol. 91, pp. 181103/1-181103/3, Oct. 2007.
8. I. V. Rozhansky and D. A. Zakheim, "Analysis of the causes of the decrease in the electroluminescence efficiency of AlGaInN light-emitting-diode heterostructures at high pumping density," Semiconductors, vol.40, no.7, pp. 839-845, Jul. 2006.
9. I. V. Rozhansky and D. A. Zakheim, "Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping," Phys. Status Sol. A, vol.204, no.1, pp. 227-230, Jan. 2007.
10. I. A. Pope, P. M. Smowton, P. Blood, J. D. Thomson, M. J. Kappers, and C. J. Humphreys, "Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm," Appl. Phys. Lett., vol.82, no.17, pp. 2755-2757, Apr. 2003.
11. M.-H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, "Origin of efficiency droop in GaN-based light-emitting diodes," Appl. Phys. Lett., vol.91, pp. 183507/1-183507/3, Oct. 2007.
12. M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, "Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop," Appl. Phys. Lett., vol.93, pp. 041102/1-041102/3, Jul. 2008.
13. Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, "Auger recombination in InGaN measured by photoluminescence," Appl. Phys. Lett., vol.91, pp. 141101/1-141101/3, Oct. 2007.
14. 2," Appl. Phys. Lett., vol.91, pp. 243506/1-243506/3, Dec. 2007.
15. K. T. Delaney, P. Rinkem, and C. G. Van de Walle, "Auger recombination rates in nitrides from first principles," Appl. Phys. Lett., vol.94, pp. 191109/1-191109/3, May 2009.
16. M. Peter,A.Laubsch, W.Bergbauer,T. Meyer, M. Sabathil, J. Baur, and B. Hahn, "New developments in green LEDs," Phys. Stat. Sol. A, vol.206, no.6, pp. 1125-1129, Jun. 2009.
17. A. Laubsch, M. Sabathil, W. Bergbauer, M. Strassburg, H. Lugauer, M. Peter, S. Lutgen, N. Linder, K. Streubel, J. Hader, J. V. Moloney, B. Pasenow, and S. W. Koch, "On the origin of IQE droop in InGaN LEDs," Phys. Stat. Sol. C, vol. 6, no. S2, pp. S913-S916, Jun. 2009.
18. A. A. Efremov, N. I. Bochkareva, R. I. Gorbunov, D. A. Larinovich, Y. T. Rebane, D. V. Tarkhin, and Y. G. Shreter, "Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high power blue InGaN/GaN LEDs," Semiconductors, vol.40, no.5, pp. 605-610, May 2006.
19. K. Okamoto, A. Kaneta, Y. Kawakami, S. Fujita, J. Choi, M. Terazima, and T. Mukai, "Confocal microphotoluminescence of InGaN-based light-emitting diodes," J. Appl. Phys., vol.98, pp. 064503/1-064503/7, Sep. 2005.
20. S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. Denbaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota, "Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors," Nat. Mater., vol.5, no.10, pp. 810-816, Oct. 2006.
21. S. F. Chichibu, T. Sota, K. Wada, and S. Nakamura, "Exciton localization in InGaN quantum well devices," J. Vac. Sci. Technol. B, vol.16, no.4, pp. 2204-2214, Jul./Aug. 1998.
22. A. R. Vasconcellos, R. Luzzi, C. G. Rodrigues, and V. N. Freire, "Hot-phonon bottleneck in the photoinjected plasma in GaN," Appl. Phys. Lett., vol.82, no.15, pp. 2455-2457, Apr. 2003.
23. A. R. Beattie and P. T. Landsberg, "Auger effect in semiconductors," Proc. R. Soc. Lond. A., vol.249, no.1256, pp. 16-29, Jan. 1959.
24. A. R. Beattie and P. T. Landsberg, "One-dimensional overlap functions and their application to auger recombination in semiconductors," Proc. R. Soc. Lond. A., vol.258, no.1295, pp. 486-495, Nov. 1960.
25. P. T. Landsberg, "On detailed balance between Auger recombination and impact ionization in semiconductors," Proc. R. Soc. Lond. A., vol.331, no.1584, pp. 103-108, Nov. 1972.
26. P. T. Landsberg and M. J. Adams, "Theory of donor-acceptor radiative and Auger recombination in simple semiconductors," Proc. R. Soc. Lond. A., vol.334, no.1599, pp. 523-539, Sep. 1973.
27. J. Hader, J. V. Moloney, B. Pasenow, S. W. Koch, M. Sabathil, N. Linder, and S. Lutgen, "On the importance of radiative and Auger losses in GaN-based quantum wells," Appl. Phys. Lett., vol.92, no.26, pp. 261103/1-261103/3, Jun. 2008.
28. J. Xie, X. Ni, Q. Fan, R. Shimada, U. Ozgür, and H. Morko̧c, "On the efficiency droop in InGaN multiple quantum well blue light diodes and its reduction with p-doped quantum well barriers," Appl. Phys. Lett., vol.93, no.121107, pp. 1-3, Sep. 2008.
29. X. Ni, Q. Fan, R. Shimada, Ü. Özgür, and H. Morkoç, "Reduction of efficiency droop in InGaN light-emitting-diodes by coupled quantum wells," Appl. Phys. Lett., vol.93, no.171113, pp. 1-3, Oct. 2008.
30. Commission Internationale de l'Eclairage Proceedings. Cambridge, U.K.: Cambridge Univ. Press, 1931.
31. T. Smith and J. Guild, "The C.I.E. colorimetric standards and their use," Trans. Opt. Soc., vol.33, no.3, pp. 73-134, 1931-1932.
32. The Basis of Physical Photometry. Commission Internationale de l'Eclairage (CIE) Publication 18.2, Paris 1983.
33. M. S. Rea, IESNA (Illuminating Engineering Society of North America) Lighting Handbook, 9th ed., New York, 2000, p. 26-33
34. D. Evans, M. Hodapp, H. Sorensen, K. Jamison, and B. Krause, Optoelectronics/Fiber-Optics Applications Manual, 2nd ed. New York: McGraw-Hill, 1981.
35. R. N. Hall, "Electron-hole recombination in Ge," Phys. Rev., vol.87, no.2, pp. 387-387, 1952.
36. W. Shockley and W. T. Read, "Statistics of recombinations of holes and electrons," Phys. Rev., vol.87, no.5, pp. 835-842, Sep. 1952.
37. J. I. Pankove, Optical Processes in Semiconductors. Englewood Cliffs, NJ: Prentice-Hall, 1971.
38. W. Roosbroeck and W. Shockley, "Photon-radiative recombination of electrons and holes in germanium," Phys. Rev., vol.94, pp. 1558-1560, 1954.
39. J. Piprek, Semiconductor Optoelectronic Devices: Introduction to Physics and Simulations. San Diego, CA: Academic, 2003.
40. D.-J. Jang, G.-T. Lin, C.-L. Hsiao, L. W. Tu, and M.-E. Lee, "Auger recombination in InN thin films," Appl. Phys. Lett., vol.92, pp. 042101/1-042101/3, Jan. 2008.
41. S. Jursenas, S. Miasojedovas, G. Kurilcik, and A. Zukauskas, "Luminescence decay in highly excited GaN grown by hydride vapor-phase epitaxy," Appl. Phys. Lett., vol.83, no.1, pp. 66-68, Jul. 2003.
42. J. Piprek, Ed., Nitride Semiconductor Devices: Principles and Simulation. New York: Wiley, 2007.
43. K. R. Catchpole, K. L. Lin, P. Campbell, M. A. Green, A. W. Bett, and F. Dimroth, "High external quantum efficiency of planar semiconductor structures," Semicond. Sci. Technol., vol.19, no.11, pp. 1232-1235, Nov. 2004.
44. G. W. 'tHooft, M. R. Leys, and H. J. Talen-van der Mheen, "Temperature dependence of the FRadiative recombination coefficient in GaAs-(Al,Ga)As quantum wells-," Superlattices Microstructures, vol.1, no.4, pp. 307-310, 1985.
45. A. Kastalsky, S. Luryi, and B. Spivak, "Semiconductor high-energy radiation scintillation detector," Nuclear Instrum. Methods Phys. Res. A, vol.565, no.2, pp. 650-656, Sep. 2006.
46. H. Morko̧c, Handbook ofNitride Semiconductors and Devices. New York: Wiley, 2008.
47. C. B. Su, J. Schlafer, J. Manning, and R. Olshansky, "Measurement of radiative recombination coefficient an carrier leakage in 1.3/?m InGaAsP lasers with lightly doped active layers," Electron. Lett., vol.18, no.25, pp. 1108-1110, 1982.
48. P. G. Eliseev, M. Osin'ski, H. Li, and I. V. Akimova, "Recombination balance in green-light-emitting GaN/InGaN/AlGaN quantum wells," Appl. Phys. Lett., vol.75 no.24, pp. 3838-3840, 1999.
49. J. Xie, U. Ozgür, Y. Fu, X. Ni, H. Morko̧c, C. K. Inoki, T. S. Kuan, J. V. Foreman, and H. O. Everitt, "Low dislocation densities and long carrier lifetimes in GaN thin films grown on a SiNx nanonetwork," Appl. Phys. Lett., vol.90, pp. 041107/1-041107/3, Jan. 2007.
50. Q. Dai, M. F. Schubert, M. H. Kim, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, Appl. Phys. Lett., vol.94, no.11, pp. 111109-1-111109-3, 2009.
51. S. Nakamura, S. Pearton, and G. Fasol, The Blue Laser Diode: The Complete Story, 2nd ed. Berlin, Germany: Springer-Verlag, 2000.
52. Y.-L. Li, Y.-R. Huang, and Y.-H. Lai, "Efficiency droop behaviors of InGaNGaN multiple-quantum-we ll light-emitting diodes with varying quantum well thickness," Appl. Phys. Lett., vol.91, no.18, pp. 181113/1-181113/3, Oct. 2007.
53. X. Li, X. Ni, J. Lee, M. Wu, Ü. Özgür, H. Morko̧c, T. Paskova, G. Mulholland, and K. R. Evans, "Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes," Appl. Phys. Lett., vol.95, pp. 121107/1-121107/3, Sep. 2009.
54. J. Lee, X. Li, X. Ni, U. Ozgür, H. Morko̧c, T. Paskova, G. Mulholland, and K. R. Evans, "On carrier spillover in c-and m-plane InGaN light emitting diodes," Appl. Phys. Lett., vol.95, pp. 201113/1-201113/3, Nov. 2009.
55. A. Niwa, T. Ohtoshi, and T. Kuroda, "Valence subband structures of (10-10)-GaN/AlGaN strained quantum wells calculated by the tight binding method," Appl. Phys. Lett., vol.70, no.16, pp. 2159-2161, Feb. 1997.
56. M. McLaurin, T. E. Mates, F. Wu, and J. S. Speck, "Growth of p-type and n-type m-plane GaN by molecular beam epitaxy," Appl. Phys. Lett., vol.100, pp. 063707/1-063707/3, Sep. 2006.
57. C.-F. Chu, C.-C. Cheng, W.-H. Liu, J.-Y. Chu, F.-H. Fan, H.-C. Cheng, T. Doan, and C. A. Tran, "High-brightness GaN vertical light-emitting diodes on metal alloy for general lighting application," IEEE Proc., vol.98, no.7, Jul. 2010.