Excellent c-Si surface passivation by thermal atomic layer deposited aluminum oxide after industrial firing activation

Journal of Physics D: Applied Physics

Volumn 46, Issue 38, 2013, Pages

  Liao, B ^a   Stangl, R ^a   Ma, F ^a   Mueller, T ^a   Lin, F ^a   Aberle, A G ^a   Bhatia, C S ^a   Hoex, B ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE MEASUREMENTS; DEPOSITION TEMPERATURES; EFFECTIVE CARRIER LIFETIMES; HIGH-TEMPERATURE FIRING; PHOTOLUMINESCENCE IMAGING; SILICON NITRIDE CAPPING LAYER; SOLAR CELL MANUFACTURING; SURFACE RECOMBINATION VELOCITIES;

ACTIVATED ALUMINA; ALUMINUM; DEPOSITION; OXIDES; SILICON; SILICON NITRIDE; SILICON SOLAR CELLS; SILICON WAFERS;

ATOMIC LAYER DEPOSITION;

EID: 84884542186     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/46/38/385102     Document Type: Article

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