Advanced modeling of the effective minority carrier lifetime of passivated crystalline silicon wafers

Journal of Applied Physics

Volumn 112, Issue 5, 2012, Pages

  Ma, Fa Jun ^a   Samudra, Ganesh G ^a   Peters, Marius ^a   Aberle, Armin G ^a   Werner, Florian ^b   Schmidt, Jan ^b   Hoex, Bram ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADVANCED MODELING; ATOMIC LAYER DEPOSITED; CORONA CHARGE; CRYSTALLINE SILICON WAFERS; CRYSTALLINE SILICONS; HOLE LIFETIME; INJECTION LEVELS; MINORITY CARRIER LIFETIMES; P-TYPE; PHYSICAL MECHANISM; STRONG INJECTION; SURFACE DAMAGES;

ATOMIC LAYER DEPOSITION; CRYSTALLINE MATERIALS; DIELECTRIC FILMS; PASSIVATION; QUANTUM WELL LASERS; SILICON;

SILICON WAFERS;

EID: 84866353932     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4749572     Document Type: Conference Paper

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