Coordination and interface analysis of atomic-layer-deposition Al2O3 on Si(001) using energy-loss near-edge structures

Applied Physics Letters

Volumn 83, Issue 21, 2003, Pages 4306-4308

  Kimoto, K ^a   Matsui, Y ^a   Nabatame, T ^b   Yasuda, T ^c   Mizoguchi, T ^d   Tanaka, I ^d   Toriumi, A ^c,e  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^d KYOTO UNIVERSITY   (Japan)

^e UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CALCULATIONS; COORDINATION REACTIONS; DEPOSITION; ELECTRON ENERGY LOSS SPECTROSCOPY; INTERFACES (MATERIALS); OXIDATION; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC LAYER DEPOSITION; ENERGY LOSS NEAR EDGE STRUCTURES; FIRST PRINCIPLE CALCULATIONS; INTERFACE ANALYSIS;

ALUMINA;

EID: 0346215991     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1629397     Document Type: Article

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