High surface passivation quality and thermal stability of ALD Al 2O3 on wet chemical grown ultra-thin SiO2 on silicon

Energy Procedia

Volumn 8, Issue , 2011, Pages 654-659

  Bordihn, Stefan ^a,b   Engelhart, Peter ^a   Mertens, Verena ^a   Kesser, Gerd ^a   Köhn, Dennis ^a   Dingemans, Gijs ^b   Mandoc, Magda M ^b   Müller, Jörg W ^a   Kessels, W M M ^b  

^a Q Cells SE ^*  (Germany)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Silicon surface passivation

Indexed keywords

ATOMIC LAYER DEPOSITION; DEPOSITION; HYDROCHLORIC ACID; HYDROGEN PEROXIDE; NITRIC ACID; OXIDATION; PASSIVATION; PEROXIDES; SILICON; SILICON OXIDES; THERMODYNAMIC STABILITY;

FIELD EFFECT PASSIVATION; H-TERMINATED SURFACE; HIGH QUALITY SURFACE; P-TYPE SILICON; SI(100) SURFACE; SILICON SURFACES; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES;

ALUMINUM;

EID: 80052094160     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2011.06.197     Document Type: Conference Paper

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