Comparison of the thermal stability of single Al2O3 layers and Al2O3/SiNx stacks for the surface passiviation of silicon

Energy Procedia

Volumn 8, Issue , 2011, Pages 307-312

  Veith, Boris ^a   Werner, Florian ^a   Zielke, Dimitri ^a   Brendel, Rolf ^a,b   Schmidt, Jan ^a,b  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

Aluminum oxide; Silicon; Solar cells; Surface passivation

Indexed keywords

ATOMIC LAYER DEPOSITION; CRYSTALLINE MATERIALS; DEPOSITION; DEPOSITION RATES; OXIDE FILMS; OXIDES; PASSIVATION; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SILICON NITRIDE; SILICON SOLAR CELLS; SILICON WAFERS; SOLAR CELLS; THERMODYNAMIC STABILITY; ULTRATHIN FILMS; VAPOR DEPOSITION;

ALUMINUM OXIDES; ATOMIC LAYER DEPOSITED; CELL PERFORMANCE; CRYSTALLINE SILICON WAFERS; PASSIVATION LAYER; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITIONS (PE CVD); SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES;

ALUMINUM;

EID: 80052096838     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2011.06.141     Document Type: Conference Paper

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