Understanding the switching mechanism in RRAM devices and the dielectric breakdown of ultrathin high-k gate stacks from first principles calculations

ECS Transactions

Volumn 37, Issue 1, 2011, Pages 167-178

  Magyari Kope B ^a   Park, S G ^a   Lee, H D ^a   Nishi, Y ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CMOS INTEGRATED CIRCUITS; DEFECTS; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; HIGH-K DIELECTRIC; INTERFACE STATES; LOCAL DENSITY APPROXIMATION; LOGIC GATES; NICKEL OXIDE; OXIDE MINERALS; OXYGEN VACANCIES; RRAM; SEMICONDUCTOR DEVICE MANUFACTURE; THIN FILM TRANSISTORS; THIN FILMS; TITANIUM DIOXIDE; ULSI CIRCUITS;

ELECTRON TRANSPORT; FIRST PRINCIPLES METHOD; FIRST-PRINCIPLES CALCULATION; FIRST-PRINCIPLES SIMULATIONS; LOW OPERATING POWER; NON-VOLATILE MEMORY TECHNOLOGY; PHYSICAL PRINCIPLES; SWITCHING MECHANISM;

THIN FILM CIRCUITS;

EID: 84863144045     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3600737     Document Type: Conference Paper

References (59)

1. S.Q. Liu at al., Appl. Phys. Lett., 76, 2749, (2000).
2. A. Baikalov et al., Appl. Phys. Lett., 83, 957, (2003).
3. S. Tsui et al., Appl. Phys. Lett., 85, 317, (2004).
4. S. Duhalde et al., Physica B, 354, 11, (2004).
5. A. Beck et al., Appl. Phys. Lett., 77, 139, (2000).
6. Y. Watanabe et al., Appl. Phys. Lett., 78, 3738, (2001).
7. J.F. Gibbons and W.E. Beadle, Solid State Electr., 7, 785, (1964).
8. D.C. Bullock and D.J. Epstein, Appl. Phys. Lett., 17, 199, (1970).
9. S. Seo et al., Appl. Phys. Lett., 85, 5655, (2004).
10. S. Seo et al., Appl. Phys. Lett., 86, 093509, (2005).
11. T. Sakamoto et al., Appl. Phys. Lett., 82, 3032, (2003).
12. R. Waser and M. Aono, Nat. Mater. 6, 833, (2007).
13. S. B. Sinnott et al., Phys. Rev. B 61, 15645, (2000).
14. K. M. Glassford and J. R. Chelikowsky, Phys. Rev. B 46, 1284, (1992).
15. C. Lee et al., Phys. Rev. B 50, 13379, (1994).
16. S. L. Dudarev et al., Phys. Rev. B 57, 1505, (1998).
17. A. I. Liechtenstein et al., Phys. Rev. B 52, R5467, (1995).
18. J. Heyd et al., J. Chem. Phys. 118, 8207, (2003).
19. S. V. Faleev et al., Phys. Rev. Lett. 93, 126406, (2004).
20. G. Kresse and J. Furthmüller, Phys. Rev. B 54, 11169 (1996);
21. Comput. Mater. Sci. 6, 15 (1996).
22. P. E. Blöchl, Phys. Rev. B 50, 17953 (1994).
23. G. Kresse and D. Joubert, Phys. Rev. B 59, 1758 (1999).
24. K. Szot, et al., Phys. Rev. Lett., 88, 075508, (2002).
25. R. Waser, et al., Adv. Mater., 21, 2632 (2009).
26. M. Janousch, et al., Adv. Mater. 19, 2232 (2007).
27. B. Poumellec, et al., J. Phys. Condens. Matter, 3, 8195, (1991).
28. S.-G. Park, et al., Phys. Rev. B, 82, 115109, (2010).
29. J.J. Yang, et al., Nanotech. 20, 215201, (2009).
30. J.R. Jameson, et al., Appl. Phys. Lett. 91, 112101, (2007).
31. R. Dong, et al., Appl. Phys. A, 93, 409, (2008).
32. H.Y. Jeong, et al., Adv. Funct. Mater. (2010).
33. D.-H. Kwon, et al., Nature Nanotech., 5, 148 (2010).
34. B. J. Choi, et al., J. Appl. Phys. 98. 033715, (2005)
35. M.-J. Lee, et al., Nano Lett. 9, 1476, (2009)
36. J. G. Simmons and R. R. Verderber, Proc. R. Soc. London, Ser. A 301, 77, (1967)
37. H. Tang, et al., Appl. Phys. Lett. 71, 2560, (1997)
38. Y. Sato, et al., Appl. Phys. Lett. 90, 033503, (2007)
39. C. Park, et al., Appl. Phys. Lett. 93, 042102, (2008)
40. C. B. Lee, et al. Appl. Phys. Lett. 93, 042115, (2008)
41. S. R. Lee, et al., Jpn. J. Appl. Phys. 49, 031102, (2010)
42. H.D. Lee, et al., Phys. Rev. B, 81, 193202, (2010)
43. J.P. Joshi, et al., J. Phys.: Cond. Matt. 16, 2869, (2004).
44. A.-M. Haghiri Gosnet, et al., J. Phys. D: Appl. Phys. 36, R127, (2003).
45. C. Jooss, et al., Proc. Nat. Acad. of Sci. 104, 13597, (2007).
46. Y.B. Nian, et al., Phys. Rev. Lett. 98, 146403, (2007).
47. A. Sawa, et al., Appl. Phys. Lett. 85, 4073, (2004).
48. R. Fors, et al., Phys. Rev. B 71, 045305, (2005).
49. Z.L. Liao, et al., Appl. Phys. Lett. 94, 253503, (2009).
50. D.-J. Seong, et al., IEDM Tech. Dig. (2009).
51. M. D. Earle, Phys. Rev. 61, 56, (1942).
52. D. C. Cronemeyer, Phys. Rev. 113, 1222, (1959).
53. J. Chen, et al., Phys. Chem. Solids 62, 1257, (2001).
54. E. Cho, et al., Phys. Rev. B 73, 193202, (2006).
55. M. Ramamorthy, et al., Phys. Rev. B 49, 7709, (1994).
56. K. Szot, et al., Nat. Mater. 5, 312, (2006).
57. A. J. Bosman, et al., Phys. Lett. 19, 372, (1965).
58. S. Park, et al., Phys. Rev. B 77, 134103, (2008).
59. K. Jung, et al., Appl. Phys. Lett. 90, 052104, (2007).