CAFM investigations of filamentary conduction in Cu2O ReRAM devices fabricated using stencil lithography technique

Nanotechnology

Volumn 23, Issue 49, 2012, Pages

  Singh, Bharti ^a   Mehta, B R ^a   Varandani, Deepak ^a   Veronica Savu, Andreea ^b   Brugger, Juergen ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^b EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE SIZE; CONDUCTIVE ATOMIC FORCE MICROSCOPES; CURRENT LEVELS; FILAMENTARY CONDUCTION; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; MEMORY CELL; RESISTIVE MEMORIES; RESISTIVE SWITCHING; STENCIL LITHOGRAPHY; TWO-STATE;

ATOMIC FORCE MICROSCOPY; SEMICONDUCTOR STORAGE; SWITCHING SYSTEMS;

LITHOGRAPHY;

COPPER; CUPRIC OXIDE; NANOMATERIAL;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMISTRY; DATA STORAGE DEVICE; ELECTRIC CONDUCTIVITY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; INSTRUMENTATION; METHODOLOGY; PHOTOGRAPHY; SIGNAL PROCESSING; ULTRASTRUCTURE;

COMPUTER STORAGE DEVICES; COPPER; ELECTRIC CONDUCTIVITY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MICROSCOPY, ATOMIC FORCE; NANOSTRUCTURES; PHOTOGRAPHY; SIGNAL PROCESSING, COMPUTER-ASSISTED;

EID: 84870052589     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/49/495707     Document Type: Article

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