From atomic structure to photovoltaic properties in CdTe solar cells

Ultramicroscopy

Volumn 134, Issue , 2013, Pages 113-125

  Li, Chen ^a,b   Poplawsky, Jonathan ^a,c   Wu, Yelong ^d   Lupini, Andrew R ^a   Mouti, Anas ^a,e   Leonard, Donovan N ^a   Paudel, Naba ^d   Jones, Kim ^f   Yin, Wanjian ^d   Al Jassim, Mowafak ^f   Yan, Yanfa ^d   Pennycook, Stephen J ^a,c  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c University of Tennessee Knoxville   (United States)

^d UNIVERSITY OF TOLEDO   (United States)

^e UNIVERSITY OF KENTUCKY   (United States)

^f NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

Cathodoluminescence; CdTe; Dislocation core structure; Electrical activity; Electron beam induced current; Solar cell

Indexed keywords

ABERRATION-CORRECTED SCANNING TRANSMISSION ELECTRON MICROSCOPIES; CDTE; DISLOCATION CORE STRUCTURE; ELECTRICAL ACTIVITIES; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRON BACK SCATTER DIFFRACTION; ELECTRON-BEAM-INDUCED-CURRENT; SHOCKLEY PARTIAL DISLOCATIONS;

CADMIUM CHLORIDE; CADMIUM TELLURIDE; CATHODOLUMINESCENCE; ELECTRON ENERGY LOSS SPECTROSCOPY; GRAIN BOUNDARIES; SCANNING ELECTRON MICROSCOPY; SOLAR CELLS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRIC PROPERTIES;

CADMIUM CHLORIDE; CADMIUM DERIVATIVE; GLASS; TELLURIUM DERIVATIVE;

ARTICLE; ATOM; CHEMICAL MODEL; CHEMICAL PARAMETERS; CHEMICAL STRUCTURE; ELECTRIC POTENTIAL; ELECTRON BEAM; ELECTRON ENERGY LOSS SPECTROSCOPY; LUMINESCENCE; MATHEMATICAL COMPUTING; RENEWABLE ENERGY; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SOLAR CELL; STRUCTURE ANALYSIS;

EID: 84883558096     PISSN: 03043991     EISSN: 18792723     Source Type: Journal    
DOI: 10.1016/j.ultramic.2013.06.010     Document Type: Article

References (73)

1. Shockley W., Queisser H.J. Detailed balance limit of efficiency of p-n junction solar cells. Journal of Applied Physics 1961, 32:510.
2. Green M.A. Radiative efficiency of state-of-the-art photovoltaic cells. Progress in Photovoltaics: Research and Applications 2012, 20:472-476.
3. Green M.A., Emery K., Hishikawa Y., Warta W., Dunlop E.D. Solar cell efficiency tables (version 41). Progress in Photovoltaics: Research and Applications 2013, 21:1-11.
4. Green M.A., Emery K., Hishikawa Y., Warta W., Dunlop E.D. Solar cell efficiency tables (version 41). Progress in Photovoltaics: Research and Applications 2012, 20:606-614.
5. National renewable energy laboratory, best research-cell efficiencies, http://www.nrel.gov/ncpv/images/efficiency_chart.jpg.
6. Seto J.Y.W. The electrical properties of polycrystalline silicon films. Journal of Applied Physics 1975, 46:5247-5254.
7. Sutton A.P., Balluffi R.W. Interfaces in Crystalline Materials 1995, Oxford Science Publications, New York.
8. 2 with atomic resolution. Physical Review Letters 2012, 108:075502.
9. Lu P., Smith D.J. Dissociated 60° dislocations in CdTe studied by high-resolution electron microscopy. Philosophical Magazine Part B 1990, 62:435-450.
10. Usui H., Ishiji K., Yasuda H., Mori H. Growth process and nanostructure of crystalline GaAs on Si(110) surface prepared by molecular beam epitaxy. Journal of Crystal Growth 2006, 289:76-80.
11. Said K., Poortmans J., Caymax M., Loo R., Daami A., Bremond G., Kruger O., Kittler M. High quality, relaxed SiGe epitaxial layers for solar cell application. Thin Solid Films 1999, 337:85-89.
12. Liu X.H., Huang J.Y. In situ TEM electrochemistry of anode materials in lithium ion batteries. Energy and Environmental Science 2011, 4:3844-3860.
13. Holt D.B., Hardingham C., Lazzarini L., Nasi L., ZanottiFregonara C., Salviati G., Mazzer M. Properties and structure of antiphase boundaries in GaAs/Ge solar cells. Materials Science and Engineering B-Solid State Materials for Advanced Technology 1996, 42:204-207.
14. Wu H.Y., Meng F., Li L.S., Jin S., Zheng G.F. Dislocation-driven CdS and CdSe nanowire growth. ACS Nano 2012, 6:4461-4468.
15. 2 surface layer. Thin Solid Films 2012, 520:2873-2877.
16. Sabinina I.V., Gutakovsky A.K., Sidorov Y.G., Latyshev A. Nature of V-shaped defects in HgCdTe epilayers grown by molecular beam epitaxy. Journal of Crystal Growth 2005, 274:339-346.
17. Loginov Y.Y., Durose K., AlAllak H.M., Galloway S.A., Oktik S., Brinkman A.W., Richter H., Bonnet D. Transmission electron microscopy of CdTe/CdS based solar cells. Journal of Crystal Growth 1996, 161:159-163.
18. Yan Y.F., Al-Jassim M.M., Jones K.M. Characterization of extended defects in polycrystalline CdTe thin films grown by close-spaced sublimation. Thin Solid Films 2001, 389:75-77.
19. Hiraga K., Hirabayashi M., Sato M., Sumino K. Dislocations in silicon observed by high-voltage, high-resolution electron-microscopy. Crystal Research and Technology 1982, 17:189-195.
20. Bourret A., Desseaux J., Renault A. Core structure of the Lomer dislocation in germanium and silicon. Philosophical Magazine 1982, 45:1-20.
21. Echigoya J., Pirouz P., Edington J.W. Preliminary studies of crystal defects in cadmium sulphide by high-resolution transmission electron microscopy. Philosophical Magazine A 1982, 45:455-466.
22. Suzuki K., Ichihara M., Takeuchi S., Nakagawa K., Maeda K., Iwanaga H. In situ TEM observation of dislocation motion in II-VI compounds. Philosophical Magazine A 1984, 49:451-461.
23. Takeuchi S., Suzuki K., Maeda K., Iwanaga H. Stacking-fault energy of II-VI compounds. Philosophical Magazine A 1985, 50:171-178.
24. Glaisher R.W., Spargo A.E.C., Smith D.J. A systematic analysis of HREM imaging of wurtzite semiconductors. Ultramicroscopy 1989, 27:117-130.
25. Krivanek O.L., Dellby N., Lupini A.R. Towards sub-Å electron beams. Ultramicroscopy 1999, 78:1-11.
26. Batson P.E., Dellby N., Krivanek O.L. Sub-angstrom resolution using aberration corrected electron optics. Nature 2002, 418:617-620.
27. Krivanek O.L., Nellist P.D., Dellby N., Murfitt M.F., Szilagyi Z. Towards sub-0.5 angstrom electron beams. Ultramicroscopy 2003, 96:229-237.
28. Nellist P.D., Chisholm M.F., Dellby N., Krivanek O.L., Murfitt M.F., Szilagyi Z.S., Lupini A.R., Borisevich A., Sides W.H., Pennycook S.J. Direct sub-angstrom imaging of a crystal lattice. Science 2004, 305. 1741-1741.
29. Pennycook S.J., Jesson D.E. High-resolution incoherent imaging of crystals. Physical Review Letters 1990, 64:938-941.
30. Pennycook S.J., Jesson D.E. High-resolution Z-contrast imaging of crystals. Ultramicroscopy 1991, 37:14-38.
31. Pennycook S.J., Colliex C. Spectroscopic imaging in electron microscopy. MRS Bulletin 2012, 37:13-18.
32. Krivanek O.L., Dellby N., Keyse R.J., Murfitt M.F., Own C.S., Szilagyi Z.S. Chapter 3 advances in aberration-corrected scanning transmission electron microscopy and electron energy-loss spectroscopy. Advances in imaging and electron physics 2008, 153:121-160.
33. Liechtenstein A., Anisimov V., Zaanen J. Density-functional theory and strong interactions: Orbital ordering in Mott-Hubbard insulators. Physical Review B 1995, 52:R5467.
34. Anisimov V., Zaanen J., Andersen O. Band theory and Mott insulators: Hubbard U instead of Stoner I. Physical Review B 1991, 44:943.
35. Dudarev S.L., Botton G.A., Savrasov S.Y., Humphreys C.J., Sutton A.P. Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study. Physical Review B 1998, 57:1505.
36. Y. Wu, G. Chen, W. Yin, M.M. Al-Jassim, S.J. Pennycook, Y. Yan, Assessment of LDA+U/GGA+U calculation of the structural and electronic properties of CdTe, Phys. Rev. B, (Submitted) (2013).
37. Blöchl P.E. Projector augmented-wave method. Physical Review B 1994, 50:17953.
38. Kresse G., Furthmüller J. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set. Computational Materials Science 1996, 6:15.
39. Kresse G., Furthmüller J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Physical Review B 1996, 54:11169.
40. Madelung O., Hellwege K.H., Fischer G. Landolt-börnstein: Numerical Data and Functional Relationships in Science and Technology 1982, Springer-Verlag, Berlin.
41. Fonthal G., Tirado-Mejia L., Marin-Hurtado J., Ariza-Calderon H., Mendoza-Alvarez J.G. Temperature dependence of the band gap energy of crystalline CdTe. Journal of Physics and Chemistry of Solids 2000, 61:579.
42. R.E. Treharne, B.L. Williams, L. Bowen, B.G. Mendis, K. Durose, Investigation of post deposition CdCl2 treatment for fully sputtered CdTe/Cds thin film solar cells, in: Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE, 2012, pp. 001983-001987.
43. 2-treated CdTe/CdS thin films. Progress in Photovoltaics: Research and Applications 1997, 5:249-260.
44. Frank F.C., Nicholas J.F. Stable dislocations in the common crystal lattices. Philosophical Magazine Series 1953, 7(44):1213-1235.
45. Hirth J.P., Lothe J. Theory of Dislocations. Krieger 1982.
46. Hull D., Bacon D.J. Introduction to Dislocations 2011, Butterworth-Heinemann. 5th ed.
47. Hornstra J. Dislocations in the diamond lattice. Journal of Physics and Chemistry of Solids 1958, 5:129-141.
48. Li C., Wu Y., Pennycook T.J., Lupini A.R., Leonard D.N., Yin W., Paudel N., Al-Jassim M., Yan Y., Pennycook S.J. Electrically benign intra grain defects in CdTe. Physical Review Letters 2013, Submitted.
49. C. Li, T.J. Pennycook, D.N. Leonard, K. Jones, Z. Wang, M. Al-Jassim, N. Paudel, Y. Yan, S.J. Pennycook, Core structures of dislocations within CdTe grains, MRS Proceeding 1526-tt05-44, 2013, http://dx.doi.org/10.1557/opl.2013.569.
50. George A., Schroter W., Escarava C, Champier G. Velocities of screw and 60 degrees dislocations in silicon. Physica Status Solidi B-Basic Research 1972, 53:483-496.
51. Marklund S. Electron-states associated with core region of 60-degrees-dislocation in silicon and germanium. Physica Status Solidi B-Basic Research 1978, 85:673-681.
52. George A., Champier G. Velocities of screw and 60-degrees dislocations in n-type and p-type silicon. Physica Status Solidi A-Applied Research 1979, 53:529-540.
53. Zhu J.G., Carter C.B. 60-degrees dislocations in (001) GaAs/Si interfaces. Philosophical Magazine A-Physics of Condensed Matter Structure Defects and Mechanical Properties 1990, 62:319-328.
54. Gottschalk H., Hiller N., Sauerland S., Specht P., Alexander H. Constricted dislocations and their use for TEM measurements of the velocities of edge and 60-degrees dislocations in silicon - a new approach to the problem of kink migration. Physica Status Solidi A-Applied Research 1993, 138:547-555.
55. Holt D.B. Defects in the sphalerite structure. Journal of Physics and Chemistry of Solids 1962, 23:1353-1362.
56. Louchet F., Thibault-Desseaux J. Dislocation cores in semiconductors. From the shuffle or glide dispute to the glide and shuffle partnership. Rev. Phys. Appl. (Paris) 1987, 22:207-219.
57. Benthem K.v., Lupini A.R., Kim M., Baik H.S., Doh S., Lee J.-H., Oxley M.P., Findlay S.D., Allen L.J., Luck J.T., Pennycook S.J. Three-dimensional imaging of individual hafnium atoms inside a semiconductor device. Applied Physics Letters 2005, 87:034104.
58. Borisevich A.Y., Lupini A.R., Pennycook S.J. Depth sectioning with the aberration-corrected scanning transmission electron microscope. Proceedings of the National Academy of Sciences of the United States of America 2006, 103:3044-3048.
59. van Benthem K., Lupini A.R., Oxley M.P., Findlay S.D., Allen L.J., Pennycook S.J. Three-dimensional ADF imaging of individual atoms by through-focal series scanning transmission electron microscopy. Ultramicroscopy 2006, 106:1062-1068.
60. Van Dyck D., Chen J.H. A simple theory for dynamical electron diffraction in crystals. Solid State Communications 1999, 109:501-505.
61. Geuens P., Van Dyck D. The s-state model: a work horse for HRTEM. Ultramicroscopy 2002, 93:179-198.
62. Op de Beeck M., Van Dyck D., Coene W. Wave function reconstruction in HRTEM: the parabola method. Ultramicroscopy 1996, 64:167-183.
63. Geuens P., Dyck D.V. The s-state model for electron channeling in high-resolution electron microscopy. Advances in Imaging and Electron Physics 2005, 111-226. vol. 136. P.W. Hawkes (Ed.).
64. Van Aert S., Verbeeck J., Erni R., Bals S., Luysberg M., Dyck D.V., Tendeloo G.V. Quantitative atomic resolution mapping using high-angle annular dark field scanning transmission electron microscopy. Ultramicroscopy 2009, 109:1236-1244.
65. Peng Y., Nellist P.D., Pennycook S.J. HAADF-STEM imaging with sub-angstrom probes: a full Bloch wave analysis. Journal of Electron Microscopy 2004, 53:257-266.
66. Borisevich A.Y., Lupini A.R., Travaglini S., Pennycook S.J. Depth sectioning of aligned crystals with the aberration-corrected scanning transmission electron microscope. Journal of Electron Microscopy 2006, 55:7-12.
67. Cosgriff E.C., Nellist P.D. A Bloch wave analysis of optical sectioning in aberration-corrected STEM. Ultramicroscopy 2007, 107:626-634.
68. Beckman S.P., Chrzan D.C. Dislocation cores and their electronic states: Partial dislocations in GaAs. Physica B 2003, 340-342:1001-1004.
69. Yan Y., Al-Jassim M.M., Jones K.M. Characterization of extended defects in polycrystalline CdTe thin films grown by close-spaced sublimation. Thin Solid Films 2001, 389:75-77.
70. Visoly-Fisher I., Cohen S.R., Cahen D. Direct evidence for grain-boundary depletion in polycrystalline CdTe from nanoscale-resolved measurements. Applied Physics Letters 2003, 82:556.
71. Visoly-Fisher I., Cohen S.R., Cahen D., Ferekides C.S. Electronically active layers and interfaces in polycrystalline devices: Cross-section mapping of CdS/CdTe solar cells. Applied Physics Letters 2003, 83:4924.
72. Visoly-Fisher I., Cohen S.R., Gartsman K., Ruzin A., Cahen D. Understanding the beneficial role of grain boundaries in polycrystalline solar cells from single-grain-boundary scanning probe microscopy. Advanced Functional Materials 2006, 16:649-660.
73. Visoly-Fisher I., Cohen S.R., Ruzin A., Cahen D. How polycrystalline devices can outperform single-crystal ones: Thin film CdTe/CdS solar cells. Advanced Materials 2004, 16:879-883.