Growth process and nanostructure of crystalline GaAs on Si(1 1 0) surface prepared by molecular beam epitaxy

Journal of Crystal Growth

Volumn 289, Issue 1, 2006, Pages 76-80

  Usui, Hiroyuki ^a   Ishiji, Kotaro ^a   Yasuda, Hidehiro ^a   Mori, Hirotaro ^b  

^a KOBE UNIVERSITY   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

A1. Growth models; A1. Nanostructure; A3. Atomic layer epitaxy

Indexed keywords

CRYSTALLINE MATERIALS; DEFORMATION; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC LAYER EPITAXY; GAAS LAYERS; GROWTH MODELS; NANOSTRUCTURE;

CRYSTAL GROWTH;

EID: 33244477399     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.11.097     Document Type: Article

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