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Volumn 274, Issue 3-4, 2005, Pages 339-346
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Nature of V-shaped defects in HgCdTe epilayers grown by molecular beam epitaxy
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Author keywords
A1. Defects; A3. Molecular beam epitaxy; B1. Tellurites; B2. Semiconducting II VI materials; B3. Infrared devices
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Indexed keywords
ANISOTROPY;
ATOMIC FORCE MICROSCOPY;
CONCENTRATION (PROCESS);
CRYSTAL DEFECTS;
CRYSTAL GROWTH;
DISLOCATIONS (CRYSTALS);
INFRARED DEVICES;
MICROSTRUCTURE;
MORPHOLOGY;
PERTURBATION TECHNIQUES;
POLYCRYSTALLINE MATERIALS;
TRANSMISSION ELECTRON MICROSCOPY;
EPILAYERS;
HIGH RESOLUTION ELECTRON MICROSCOPY (HREM);
SEMICONDUCTING II-VI MATERIALS;
TELLURITES;
V-SHAPED DEFECTS;
MERCURY COMPOUNDS;
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EID: 12244305597
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.10.053 Document Type: Article |
Times cited : (48)
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References (13)
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