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Volumn 274, Issue 3-4, 2005, Pages 339-346

Nature of V-shaped defects in HgCdTe epilayers grown by molecular beam epitaxy

Author keywords

A1. Defects; A3. Molecular beam epitaxy; B1. Tellurites; B2. Semiconducting II VI materials; B3. Infrared devices

Indexed keywords

ANISOTROPY; ATOMIC FORCE MICROSCOPY; CONCENTRATION (PROCESS); CRYSTAL DEFECTS; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); INFRARED DEVICES; MICROSTRUCTURE; MORPHOLOGY; PERTURBATION TECHNIQUES; POLYCRYSTALLINE MATERIALS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 12244305597     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.10.053     Document Type: Article
Times cited : (48)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.