SCOPUS 정보 검색 플랫폼

Materials Science and Engineering B

Volumn 42, Issue 1-3, 1996, Pages 204-207

Properties and structure of antiphase boundaries in GaAs/Ge solar cells

(7) Holt, D B a Hardingham, C b Lazzarini, L c Nasi, L c Zanotti Fregonara, C c Salviati, G c Mazzer, M d

a IMPERIAL COLLEGE LONDON (United Kingdom)

b E2V TECHNOLOGIES (United Kingdom)

c CNR (Italy)

d UNIVERSITY OF SALENTO (Italy)

Author keywords

Antiphase boundaries; Space satellites; Stacking faults

Indexed keywords

BAND STRUCTURE; CATHODOLUMINESCENCE; DISLOCATIONS (CRYSTALS); ELECTRON BEAMS; EPITAXIAL GROWTH; INDUCED CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

ANTIPHASE BOUNDARIES (APB); ELECTRON BEAM INDUCED CURRENT (EBIC) TECHNIQUE;

SOLAR CELLS;

EID: 0041176304 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(96)01952-6 Document Type: Article

Times cited : (14)

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