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Volumn 83, Issue 24, 2003, Pages 4924-4926

Electronically active layers and interfaces in polycrystalline devices: Cross-section mapping of CdS/CdTe solar cells

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM COMPOUNDS; CAPACITANCE; COMPOSITION; INTERFACES (MATERIALS); MATHEMATICAL MODELS; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR JUNCTIONS; THRESHOLD VOLTAGE;

EID: 0347133647     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1632532     Document Type: Article
Times cited : (44)

References (23)
  • 12
    • 0348251102 scopus 로고    scopus 로고
    • note
    • + beam in a Cameca IMS4f ion microscope (for details see Ref. 14).
  • 13
    • 0346990308 scopus 로고    scopus 로고
    • note
    • -3 in the CdS, the width of this insulating layer is in the order of tens of nm. Further away into the depletion layer some electron are present, at lower concentration.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.