High quality, relaxed SiGe epitaxial layers for solar cell application

Thin Solid Films

Volumn 337, Issue 1-2, 1999, Pages 85-89

  Said, K ^a   Poortmans, J ^a   Caymax, M ^a   Loo, R ^a   Daami, A ^b   Bremond, G ^b   Kruger, O ^c   Kittler, M ^c  

^a IMEC   (Belgium)

^b UNIVERSITÉ DE LYON   (France)

^c IHP   (Germany)

Author keywords

Dislocation; Electron beam induced current; Reduced pressure chemical vapor deposition; Si xGex layers

Indexed keywords

EID: 0006235319     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01390-X     Document Type: Article

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