Fabrication and characterization of n-type aluminum-boron co-doped ZnO on p-type silicon (n-AZB/p-Si) heterojunction diodes

Materials Research Bulletin

Volumn 48, Issue 11, 2013, Pages 4596-4600

  Kumar, Vinod ^a   Singh, Neetu ^b,c   Kapoor, Avinashi ^b   Ntwaeaborwa, Odireleng M ^a   Swart, Hendrik C ^a  

^a UNIVERSITY OF THE FREE STATE   (South Africa)

^b UNIVERSITY OF DELHI   (India)

^c UNIVERSITY OF DELHI   (India)

Author keywords

A. Oxides; A. Thin films; B. Sol gel chemistry; D. Electrical properties; D. Optical properties

Indexed keywords

ANNEALING TEMPERATURES; BAND GAP VARIATION; FABRICATION AND CHARACTERIZATIONS; HETEROJUNCTION DIODES; INDUCED STRESS; P-TYPE SILICON; RECTIFYING BEHAVIORS; SOL-GEL CHEMISTRY;

ALUMINUM; ANNEALING; BORON; ELECTRIC PROPERTIES; ENERGY GAP; HETEROJUNCTIONS; SEMICONDUCTOR DIODES; SILICON OXIDES; SOL-GEL PROCESS; SOL-GELS;

SILICON;

EID: 84883429907     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2013.07.061     Document Type: Article

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