SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 520, Issue 1, 2011, Pages 445-447

Fabrication and characterization of high quality n-ZnO/p-GaN heterojunction light emission diodes

(9) Zheng, Hao a Mei, Z X a Zeng, Z Q a Liu, Y Z a Guo, L W a Jia, J F b Xue, Q K b Zhang, Z c Du, X L a

a INSTITUTE OF PHYSICS (China)

b TSINGHUA UNIVERSITY (China)

c BEIJING UNIVERSITY OF TECHNOLOGY (China)

Author keywords

Electroluminescence; Gallium nitride; Heterojunctions; Zinc oxide

Indexed keywords

CHARGED CARRIERS; CURRENT ENHANCEMENT; DRIVING CURRENT; EMISSION EFFICIENCIES; EMISSION PEAKS; HIGH QUALITY; LIGHT EMISSION DIODE; P-TYPE GAN; RADICAL RECOMBINATION; SINGLE-CRYSTALLINE; ZNO; ZNO FILMS;

GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

HETEROJUNCTIONS;

EID: 80054027775 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.06.029 Document Type: Article

Times cited : (23)

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