Electroluminescence from ZnO/ si-nanotips light-emitting diodes

Nano Letters

Volumn 9, Issue 5, 2009, Pages 1839-1843

  Hsieh, Ya Ping ^a   Chen, Hsin Yi ^a   Lin, Ming Zhang ^a   Shiu, Shu Chia ^a   Hofmann, Mario ^b   Chern, Ming Yau ^a   Jia, Xiaoting ^b   Yang, Ying Jay ^a   Chang, Hsiu Ju ^a   Huang, Hsuan Ming ^a   Tseng, Shao Chin ^a   Chen, Li Chyong ^a   Chen, Kuei Hsien ^a,c   Lin, Ching Fuh ^a   Liang, Chi Te ^a   Chen, Yang Fang ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b Massachusetts Institute of Technology Cambridge   (Taiwan)

^c INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE SPECTRA; DRY ETCHING PROCESS; FOURTH ORDER; GENERAL APPROACH; INTEGRATED TECHNOLOGIES; MULTIPHONON; NARROW-LINE WIDTH; P-N JUNCTION; P-TYPE SILICON; RAMAN SPECTRA; SEMICONDUCTOR TECHNOLOGY; SI-BASED; SILICON BASED OPTOELECTRONICS; SILICON NANOTIP ARRAYS; SINGLE-STEP; TURN ON VOLTAGE; WAFER-SCALE; ZNO FILMS;

CURRENT DENSITY; ELECTROLUMINESCENCE; EMISSION SPECTROSCOPY; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; METALLIC FILMS; NANOTIPS; PLASMA ETCHING; PULSED LASER DEPOSITION; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS; ZINC OXIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 66449131444     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl803804a     Document Type: Article

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