Fabrication and characterization of p-Si nanowires/ZnO film heterojunction diode

Solid-State Electronics

Volumn 54, Issue 12, 2010, Pages 1582-1585

  Choi, Ji Hyuk ^a   Das, Sachindra Nath ^a   Moon, Kyeong Ju ^a   Kar, Jyoti Prakash ^a   Myoung, Jae Min ^a  

^a Yonsei University   (South Korea)

Author keywords

Heterojunction diode; Nanofabrication; Nanostructures

Indexed keywords

ELECTROLESS; HETEROJUNCTION DIODES; I-V AND C-V CHARACTERISTICS; IDEALITY FACTORS; IV CHARACTERISTICS; JUNCTION PROPERTIES; NANOFABRICATION; OPTICAL STUDY; RECTIFYING BEHAVIORS; SI NANOWIRE; SI WAFER; TURN ON VOLTAGE; VERTICALLY ALIGNED; WET-CHEMICAL ETCHING; ZNO THIN FILM;

DEPOSITION; DISTILLATION; FABRICATION; HETEROJUNCTIONS; NANOWIRES; POROUS SILICON; SEMICONDUCTOR DIODES; SILICON WAFERS; THIN FILMS; WET ETCHING; ZINC OXIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77957300406     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.07.015     Document Type: Article

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