Effect of thermal annealing on properties of zinc selenide thin films deposited by chemical bath deposition

Journal of Materials Science: Materials in Electronics

Volumn 20, Issue 4, 2009, Pages 374-379

  Hankare, P P ^a   Chate, P A ^b   Sathe, D J ^a   Chavan, P A ^a   Bhuse, V M ^a  

^a SHIVAJI UNIVERSITY   (India)

^b JSM College   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CHEMICAL BATH DEPOSITION METHODS; CHEMICAL-BATH DEPOSITIONS; CUBIC STRUCTURES; DIRECT BAND GAPS; ELECTRICAL STUDIES; GLASS SUBSTRATES; GRAIN SIZES; HIGH-PERFORMANCE DEVICES; LATTICE PARAMETERS; MICRO STRAINS; POINT OF APPLICATIONS; POLY-CRYSTALLINE; PREFERENTIAL ORIENTATIONS; STRUCTURAL DATUM; THERMAL-ANNEALING; X- RAY DIFFRACTIONS; X-RAY DIFFRACTION TECHNIQUES; ZINC SELENIDE;

ANNEALING; DIFFRACTION; ELECTRODEPOSITION; OPTICAL PROPERTIES; THIN FILMS; X RAY ANALYSIS; X RAY DIFFRACTION; ZINC;

CHEMICAL PROPERTIES;

EID: 59749083168     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-008-9736-8     Document Type: Article

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