Characterization of AZO/p-Si heterojunction prepared by DC magnetron sputtering

Materials Science in Semiconductor Processing

Volumn 12, Issue 6, 2009, Pages 248-252

  Bo, He ^a   Quan, Ma Zhong ^a   Jing, Xu ^b   Lei, Zhao ^a   Sheng, Zhang Nan ^a   Feng, Li ^a   Cheng, Shen ^a   Ling, Shen ^a   Yue, Zhou Cheng ^a   Shan, Yu Zheng ^c   Ting, Yin Yan ^c  

^a SHANGHAI UNIVERSITY   (China)

^b WUHAN UNIVERSITY OF TECHNOLOGY   (China)

^c Solar Enertech Corp   (China)

Author keywords

Al doped ZnO (AZO); Current voltage (I V) characteristics; Direct current (DC) magnetron sputtering; Heterojunction

Indexed keywords

AL-DOPED ZNO; AZO FILMS; CRYSTALLINE QUALITY; DARK CONDITIONS; DC MAGNETRON SPUTTERING; DIRECT-CURRENT (DC) MAGNETRON SPUTTERING; DIRECT-CURRENT MAGNETRONS; ELECTRICAL JUNCTIONS; FOUR-POINT PROBE; HALL EFFECT MEASUREMENT; I-V MEASUREMENTS; IDEALITY FACTORS; MICRO-STRUCTURAL; OPTICAL AND ELECTRICAL PROPERTIES; RECTIFYING BEHAVIORS; REVERSE BIAS; REVERSE CURRENTS; SATURATION CURRENT; SEM; SI(1 0 0); UV-VIS SPECTROPHOTOMETERS; XRD; ZNO/P-SI;

ALUMINUM; DISTILLATION; ELECTRIC PROPERTIES; HALL EFFECT; HETEROJUNCTIONS; MAGNETIC FIELD EFFECTS; MAGNETRON SPUTTERING; MAGNETRONS; OPTICAL FILMS; OPTICAL PROPERTIES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; ZINC OXIDE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77649232705     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2009.12.006     Document Type: Article

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