Electrical characterization of the diodes-based nanostructure ZnO:B

EPJ Applied Physics

Volumn 58, Issue 3, 2012, Pages

  Yakuphanoglu, F ^a   Caglar, Y ^b   Caglar, M ^b   Ilican, S ^b  

^a FIRAT UNIVERSITY   (Turkey)

^b ANADOLU UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; DARK CURRENT-VOLTAGE; DIODE PARAMETERS; DOPED ZNO; ELECTRICAL CHARACTERIZATION; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; IDEALITY FACTORS; INTERFACE STATES DENSITY; MORPHOLOGICAL PROPERTIES; RECTIFYING PROPERTIES; ZNO; ZNO FILMS;

ATOMIC FORCE MICROSCOPY; DOPING (ADDITIVES); FIELD EMISSION MICROSCOPES; METALLIC FILMS; NANOSTRUCTURES; SOL-GEL PROCESS; SOLID STATE PHYSICS; ZINC OXIDE;

DIODES;

EID: 84863607127     PISSN: 12860042     EISSN: 12860050     Source Type: Journal    
DOI: 10.1051/epjap/2012120035     Document Type: Article

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