Gallium and indium co-doping of epitaxial zinc oxide thin films grown in water at 90 °c

Journal of Physics D: Applied Physics

Volumn 44, Issue 12, 2011, Pages

  Le, Hong Quang ^a   Chua, Soo Jin ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CO-DOPED; CO-DOPED ZNO; CO-DOPING; COMPENSATION EFFECTS; CONDUCTING FILMS; DOPED ZNO; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRON CONCENTRATION; FIGURE OF MERIT; GA-DOPED ZNO; GROUP III; HYDROTHERMALLY; INDIUM DOPING; INDIUM TIN OXIDE; IV CHARACTERISTICS; LATTICE STRAIN; LOW TEMPERATURES; N-TYPE LAYERS; P-GAN FILMS; SOLUTION PHASE METHODS; VAPOUR-PHASE; WHITE LIGHT EMISSION; ZINC OXIDE THIN FILMS; ZNO;

CONDUCTIVE FILMS; ELECTRIC PROPERTIES; EPITAXIAL FILMS; GALLIUM NITRIDE; HETEROJUNCTIONS; HYDROTHERMAL SYNTHESIS; INDIUM; INDIUM COMPOUNDS; LIGHT EMISSION; LIGHT EMITTING DIODES; OPTICAL PROPERTIES; OXIDE FILMS; TIN; TIN OXIDES; ZINC; ZINC OXIDE;

SEMICONDUCTOR DOPING;

EID: 79952940849     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/12/125104     Document Type: Article

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