Inkjet printed, high mobility inorganic-oxide field effect transistors processed at room temperature

ACS Nano

Volumn 5, Issue 12, 2011, Pages 9628-9638

  Dasgupta, Subho ^a   Kruk, Robert ^a   Mechau, Norman ^a   Hahn, Horst ^a,b,c  

^a KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

^b DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^c KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

Author keywords

electrochemical gating; high mobility; inorganic oxide FET; nanoparticle channel transistor; printed electronics; room temperature processing

Indexed keywords

ELECTROCHEMICAL GATING; HIGH MOBILITY; INORGANIC OXIDE FET; PRINTED ELECTRONICS; ROOM TEMPERATURE;

FLEXIBLE ELECTRONICS; MESFET DEVICES; NANOPARTICLES; PROCESSING;

TRANSISTORS;

INORGANIC COMPOUND; NANOMATERIAL; OXIDE;

ARTICLE; CHEMISTRY; COMPUTER; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; MICROFLUIDICS; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; TEMPERATURE; ULTRASTRUCTURE;

COMPUTER PERIPHERALS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; INORGANIC CHEMICALS; MICROFLUIDICS; NANOSTRUCTURES; NANOTECHNOLOGY; OXIDES; PARTICLE SIZE; TEMPERATURE; TRANSISTORS, ELECTRONIC;

EID: 84555177404     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn202992v     Document Type: Article

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