Low-frequency noise performance of a bilayer InZnOInGaZnO thin-film transistor for analog device applications

IEEE Electron Device Letters

Volumn 31, Issue 10, 2010, Pages 1128-1130

  Jeon, Sanghun ^a   Kim, Sun Il ^a   Park, Sungho ^b   Song, Ihun ^a   Park, Jaechul ^a   Kim, Sangwook ^a   Kim, Changjung ^a  

^a SAMSUNG Electronics   (South Korea)

^b Daejin University   (South Korea)

Author keywords

Analog device applications; bilayer oxide semiconductor; electron devices; noise performance; thin film devices; thin film transistor (TFT)

Indexed keywords

ANALOG DEVICES; BI-LAYER; CARRIER NUMBER FLUCTUATION; COMPARATIVE STUDIES; GATE LENGTH; HIGH MOBILITY; LOW-FREQUENCY NOISE; LOW-FREQUENCY NOISE PERFORMANCE; NOISE PERFORMANCE; NORMALIZED NOISE; SINGLE LAYER;

ELECTRON DEVICES; FIELD EFFECT TRANSISTORS; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR DEVICES; THERMAL NOISE;

THIN FILM TRANSISTORS;

EID: 77957552122     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2059694     Document Type: Article

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