Flexible hybrid complementary inverters with high gain and balanced noise margins using pentacene and amorphous InGaZnO thin-film transistors

Organic Electronics

Volumn 11, Issue 6, 2010, Pages 1074-1078

  Kim, J B ^a   Fuentes Hernandez, C ^a   Kim, S J ^a   Choi, S ^a   Kippelen, B ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Complementary inverter; Indium gallium zinc oxide; Noise margin; Pentacene; Thin film transistors

Indexed keywords

AMORPHOUS FILMS; ELECTRIC INVERTERS; GALLIUM COMPOUNDS; II-VI SEMICONDUCTORS; ORGANIC-INORGANIC MATERIALS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM CIRCUITS; THIN FILMS; THRESHOLD VOLTAGE; ZINC OXIDE;

COMPLEMENTARY INVERTERS; HYBRID ORGANIC-INORGANIC; INDIUM GALLIUM ZINC OXIDES; NOISE MARGINS; PENTACENES; SATURATION MOBILITY; SWITCHING THRESHOLD VOLTAGE; THIN FILM TRANSISTORS (TFTS);

THIN FILM TRANSISTORS;

EID: 78149444151     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2010.03.008     Document Type: Article

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