Realization of graphene field-effect transistor with high-κ HCa 2Nb3O10 nanoflake as top-gate dielectric

Applied Physics Letters

Volumn 103, Issue 2, 2013, Pages

  Li, Wenwu ^a   Li, Song Lin ^a   Komatsu, Katsuyoshi ^a   Aparecido Ferreira, Alex ^a   Lin, Yen Fu ^a   Xu, Yong ^a   Osada, Minoru ^a   Sasaki, Takayoshi ^a   Tsukagoshi, Kazuhito ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATIVE DIELECTRICS; GATE LEAKAGES; GRAPHENE DEVICES; GRAPHENE FIELD-EFFECT TRANSISTORS; HIGH QUALITY; ROOM TEMPERATURE; TOP GATE;

FIELD EFFECT TRANSISTORS; GATE DIELECTRICS;

GRAPHENE;

EID: 84880484341     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4813537     Document Type: Article

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